Results 241 to 250 of about 70,499,433 (305)

Silicon-on-Insulator (SOI) optical waveguides with liquid crystals

, 2012
Ako, Thomas, Beeckman, Jeroen, Neyts, Kristiaan   +2 more
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Transconductance of Silicon-on-Insulator (SOI) MOSFET's

IEEE Electron Device Letters, 1985
Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET's has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices.
J -P Colinge
exaly   +2 more sources

Silicon-on-insulator (SOI) as a Photonics Platform

ECS Meeting Abstracts, 2006
Abstract not Available.
Dan-Xia Xu, Pavel Cheben, Boris Lamontagne, Siegfried Janz, Winnie Ye   +4 more
openaire   +1 more source

Nanophotonic applications for silicon-on-insulator (SOI)

SPIE Proceedings, 2004
Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world.
Paul R. de la Houssaye, Stephen D. Russell, Randy L. Shimabukuro   +2 more
openaire   +1 more source

Silicon-on-Insulator (SOI) Movable Integrated Optical Waveguide Technology

Sensors and Actuators A: Physical, 1996
The technology of a new type of optical waveguide, the silicon-on-insulator (SOI) movable integrated optical waveguide, is discussed. The fabrication method based on the surface-micromachining technique and wafer bonding is described.
G K L Wong
exaly   +1 more source

Silicon-on-insulator (SOI) structures for pressure sensors

Sensors and Actuators A: Physical, 1991
Abstract The zone-melting-recrystallization method of preparating silicon-on-insulator (SOI) films, its variations, advantages, disadvantages, and its applicability for pressure sensors are considered in this article. The method of artificial epitaxy (graphoepitaxy) allows microstructures in SOI films to be controlled.
Eugene I. Givargizov, Alexander B. Limanov, Gennadi D. Prjakhin, Vladimir I. Vaganov   +3 more
openaire   +1 more source

High voltage silicon-on-insulator (SOI) MOSFETs

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, 2002
Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results obtained for these devices are presented. The devices can be implemented using a CMOS-SOI compatible process.
Q. Lu, P. Ratnam, C.A.T. Salama
openaire   +1 more source

Silicon-on-insulator (SOI) by bonding and ETCH-back

1985 International Electron Devices Meeting, 1985
A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum.
J.B. Lasky, S.R. Stiffler, F.R. White, J.R. Abernathey   +3 more
openaire   +1 more source