Review of Silicon Carbide Processing for Power MOSFET
Crystals, 2022 Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention ...
Catherine Langpoklakpam +9 more
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Study on the preparation of silicon carbide from carbon in waste cathodes
Materials Research Express, 2022 Silicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge.
Hui Liao, Longjiang Li, Song Mao
doaj +1 more source
Integrated silicon carbide electro-optic modulator
Nature Communications, 2022 Owing to its attractive optical and electronic properties, silicon carbide is an emerging platform for integrated photonics. However an integral component of the platform is missing—an electro-optic modulator, a device which encodes electrical signals ...
K. Powell +8 more
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Silicon Carbide Platelet/Silicon Carbide Composites [PDF]
Journal of the American Ceramic Society, 1995 α‐silicon carbide platelet/β‐silicon carbide composites have been produced in which the individual platelets were coated with an aluminum oxide layer. Hot‐pressed composites showed a fracture toughness as high as 7.2 MPa·m 1/2 .
Mitchell, T. +3 more
openaire +2 more sources
Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network [PDF]
Компьютерная оптика, 2020 Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them.
A.V. Bragin +3 more
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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
AIP Advances, 2021 Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured ...
F. Meier +6 more
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High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics
Light: Science & Applications, 2021 The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear ...
Chengli Wang +15 more
semanticscholar +1 more source
Soil stabilization using Silicon Carbide (SiC) nanoparticles: confirmation using XRD, SEM, and FTIR
Journal of Civil Engineering and Management, 2022 The current research focuses on nanoparticles’ ground-improvement potential using clayey soil mixed with varying amounts of the nanoparticles “Silicon Carbide”.
Abdullah H. Alsabhan +5 more
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The Creation of True Two-Dimensional Silicon Carbide
Nanomaterials, 2021 This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material ...
Sakineh Chabi +4 more
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Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation
Materials, 2021 The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed.
A. Lebedev +3 more
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