Results 11 to 20 of about 128,008 (303)
Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
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Study on the preparation of silicon carbide from carbon in waste cathodes
Materials Research Express, 2022 Silicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge.
Hui Liao, Longjiang Li, Song Mao
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Silicon Carbide Platelet/Silicon Carbide Composites [PDF]
Journal of the American Ceramic Society, 1995 α‐silicon carbide platelet/β‐silicon carbide composites have been produced in which the individual platelets were coated with an aluminum oxide layer. Hot‐pressed composites showed a fracture toughness as high as 7.2 MPa·m 1/2 .
Mitchell, T. +3 more
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Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network [PDF]
Компьютерная оптика, 2020 Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them.
A.V. Bragin +3 more
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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
AIP Advances, 2021 Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured ...
F. Meier +6 more
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Soil stabilization using Silicon Carbide (SiC) nanoparticles: confirmation using XRD, SEM, and FTIR
Journal of Civil Engineering and Management, 2022 The current research focuses on nanoparticles’ ground-improvement potential using clayey soil mixed with varying amounts of the nanoparticles “Silicon Carbide”.
Abdullah H. Alsabhan +5 more
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Porous structures based on silicon carbide for photovoltaic cells
Физика волновых процессов и радиотехнические системы, 2019 A method for producing porous silicon carbide by carbonization of porous silicon is considered. The surface morphology and phase composition of porous silicon carbide layers obtained by diffusion of carbon from the gas phase into the porous silicon layer
D.Y. Golubeva +3 more
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AIP Advances, 2014 Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step
Hui-Jun Guo +9 more
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Effect of reaction sintering modes on the structure and properties of carbide ceramics
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2019 Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of
E. V. Zvonarev +4 more
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An Initial Assessment of Infiltration Material Selection for Selective Laser Sintered Preforms [PDF]
, 2004 High-temperature infiltration is an important process that is used to add strength to skeletal microstructures. In this study, particulate metal matrix composites (MMCs) are fabricated.
Barrow, Stacia L. +2 more
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