Results 81 to 90 of about 264,755 (289)

Investigation on filter requirements and stability effects of SiC MOSFET-based high-frequency grid-connected converters

open access: yesThe Journal of Engineering, 2019
The new era of power semiconductor devices is exploiting the high potential of wide bandgap device-based high-frequency power converters. The advanced capabilities of Silicon carbide (SiC) semiconductors allow the power converters to switch at higher ...
Blessy John   +3 more
doaj   +1 more source

Enhancing Optoelectronic Properties in Phthalocyanine‐Based SURMOFs: Synthesis of ABAB Linkers by Avoiding Statistical Condensation with Tailored Building Blocks

open access: yesAdvanced Functional Materials, EarlyView.
A novel phthalocyanine (PC)‐based metal–organic framework (MOFs) is synthesized using ditopic PC linkers obtained through regioselective statistical condensation. The resulting MOF exhibits significant improvements in electronic absorption, thereby enhancing the material's performance in light harvesting and energy conversion.
Lukas S. Langer   +12 more
wiley   +1 more source

Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

open access: yesThe Journal of Engineering, 2019
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters ...
F. Aguilar Vega   +4 more
doaj   +1 more source

Friction, wear, and thermal stability studies of some organotin and organosilicon compounds [PDF]

open access: yes
Thermal decomposition temperatures were determined for a number of organotin and organosilicon compounds. A ball-on-disk sliding friction apparatus was used to determine the friction and wear characteristics of two representative compounds, (1) 3-tri-n ...
Jones, W. R., Jr.
core   +1 more source

NanoMOF‐Based Multilevel Anti‐Counterfeiting by a Combination of Visible and Invisible Photoluminescence and Conductivity

open access: yesAdvanced Functional Materials, EarlyView.
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner   +9 more
wiley   +1 more source

Bionic boron/silicon-modified phenolic resin system with multifunctional groups: synthesis, thermal properties and ablation mechanism

open access: yesBiosurface and Biotribology, 2018
A kind of silicon-and-boron-modified phenolic–formaldehyde resin (SBPF) with excellent thermal stability was fabricated via a simple two-step method and used for the matrix of ablation materials.
Fengyi Wang   +2 more
doaj   +1 more source

Silylation of Carbohydrate Syrups [PDF]

open access: yes, 1979
Introduction Carbohydrates are usually difficult to analyze in solutions. Gas chromatography provides a suitable means for analysis. However most carbohydrate compounds are not volatile enough for use by this method.
Gorwitz, Mark
core   +1 more source

Molecular recognition on acoustic wave devices [PDF]

open access: yes, 1992
Microporous thin films composed either of zeolite crystals embedded in sol-gel derived glass or of a molecular coupling layer, zeolite crystals and a porous silica overlayer, were formed on the gold electrodes of Quartz Crystal Microbalances (QCM). The
Bein, Thomas   +4 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

open access: yesIEEE Journal of the Electron Devices Society, 2019
Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices.
Kazuhiro Mochizuki   +3 more
doaj   +1 more source

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