Results 31 to 40 of about 17,729 (266)

Generative machine learning for fast silicon detector simulation [PDF]

EPJ Web of Conferences
Simulation of physics processes and detector response is not only a vital part of high energy physics research, but also represents a large fraction of computing cost.
Novak Tadej
doaj   +1 more source

Silicon detectors at the ILC [PDF]

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007
Silicon detectors are being developed for several applications in ILC detectors. These include vertex detection, tracking, electromagnetic calorimetry, and forward detectors. The advantages of silicon detector technology have been incorporated into a full detector design, SiD (the Silicon Detector). A brief overview of this effort is presented.
Brau, James E., Breidenbach, Martin, Baltay, Charles, Frey, Raymond E., Strom, David M.   +4 more
openaire   +2 more sources

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

npj 2D Materials and Applications, 2017
Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors.
Xia Wan, Yang Xu, Hongwei Guo, Khurram Shehzad, Ayaz Ali, Yuan Liu, Jianyi Yang, Daoxin Dai, Cheng-Te Lin, Liwei Liu, Hung-Chieh Cheng, Fengqiu Wang, Xiaomu Wang, Hai Lu, Weida Hu, Xiaodong Pi, Yaping Dan, Jikui Luo, Tawfique Hasan, Xiangfeng Duan, Xinming Li, Jianbin Xu, Deren Yang, Tianling Ren, Bin Yu   +24 more
doaj   +1 more source

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

EPJ Web of Conferences, 2017
Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies.
Chesnevskaya S., Balabanski D. L., Choudhury D., Cognata M. La, Constantin P., Filipescu D. M., Ghita D. G., Guardo G. L., Lattuada D., Matei C., Rotaru A., Spitaleri C., State A., Xu Y.   +13 more
doaj   +1 more source

Progress in 3D Silicon Radiation Detectors

Frontiers in Physics, 2022
In the past few years, there has been an increasing interest toward 3D silicon radiation detectors. Owing to their unique architecture, 3D detectors provide a remarkable radiation hardness at relatively low bias voltage (hence low power dissipation ...
Gian-Franco Dalla Betta, Gian-Franco Dalla Betta, Marco Povoli   +2 more
doaj   +1 more source

LGAD-Based Silicon Sensors for 4D Detectors

Sensors, 2023
Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several ...
Gabriele Giacomini
doaj   +1 more source

Detector Materials: Germanium and Silicon [PDF]

IEEE Transactions on Nuclear Science, 1982
This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions.
openaire   +2 more sources

Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space

Sensors, 2023
Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications.
Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Charles Shapiro, Nathan Bush, Shouleh Nikzad, David Morris, Katherine Lawrie, Jesper Skottfelt   +10 more
doaj   +1 more source

Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

Micromachines, 2020
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm.
Manwen Liu, Tao Zhou, Zheng Li
doaj   +1 more source

Techniques for the Investigation of Segmented Sensors Using the Two Photon Absorption-Transient Current Technique

Sensors, 2023
The two photon absorption-transient current technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a ...
Sebastian Pape, Esteban Currás, Marcos Fernández García, Michael Moll   +3 more
doaj   +1 more source