Results 41 to 50 of about 155,793 (285)

Silicon Pad Detectors for the PHOBOS Experiment at RHIC

open access: yes, 2002
The PHOBOS experiment is well positioned to obtain crucial information about relativistic heavy ion collisions at RHIC, combining a multiplicity counter with a multi-particle spectrometer.
A.H. Wuosmaa   +22 more
core   +1 more source

Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

open access: yesMicromachines, 2020
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm.
Manwen Liu, Tao Zhou, Zheng Li
doaj   +1 more source

3D Silicon Detectors [PDF]

open access: yesProceedings of INFN Workshop on Future Detectors for HL-LHC — PoS(IFD2014), 2015
Twenty years after their introduction by Sherwood Parker and collaborators, 3D silicon detectors have reached their maturity. The ATLAS IBLrepresents an important milestone: it is the first application of 3D technology to a High Energy Physics experiment,and it has demonstrated the feasibility of a medium volume production with a relatively good yield.
openaire   +2 more sources

Textured silicon calorimetric light detector [PDF]

open access: yesJournal of Applied Physics, 2003
We apply the standard photovoltaic technique of texturing to reduce the reflectivity of silicon cryogenic calorimetric light detectors. In the case of photons with random incidence angles, absorption is compatible with the increase in surface area.
Di Stefano, P.   +10 more
openaire   +3 more sources

Characterization of Defect Distribution in an Additively Manufactured AlSi10Mg as a Function of Processing Parameters and Correlations with Extreme Value Statistics

open access: yesAdvanced Engineering Materials, EarlyView.
Predicting extreme defects in additive manufacturing remains a key challenge limiting its structural reliability. This study proposes a statistical framework that integrates Extreme Value Theory with advanced process indicators to explore defect–process relationships and improve the estimation of critical defect sizes. The approach provides a basis for
Muhammad Muteeb Butt   +8 more
wiley   +1 more source

Test beam results of ATLAS Pixel Sensors [PDF]

open access: yes, 2002
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental behaviour of the
Lari, T.
core   +2 more sources

Beam Test Performance and Simulation of Prototypes for the ALICE Silicon Pixel Detector

open access: yes, 2005
The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions at very high ...
A. Badala   +50 more
core   +1 more source

Evaluation of the Potential of Laser Shock Peening Compared with Cold Expansion for Improving Fatigue Resistance of Riveted Lap Joints of Aerospace Grade 7175 Al Alloy

open access: yesAdvanced Engineering Materials, EarlyView.
This study investigates laser shock peening for enhancing fatigue performance of riveted aerospace aluminum joints. A comparative approach with cold expansion combines fatigue testing and synchrotron X‐ray methods. Integrating mechanical testing with residual stress and strain characterization provides insights into how different treatments affect the ...
Ogün Baris Tapar   +6 more
wiley   +1 more source

Development and characteristics of silicon coordinate-sensitive detectors for high energy physics and nuclear physics [PDF]

open access: yesЯдерна фізика та енергетика, 2008
Developments of various silicon coordinate-sensitive detectors of particles and radiations for experiments in high energy physics and nuclear physics which are carried out by HERA-B, LHCb, ALICE collaborations and scientific establishments in Europe and
V. L. Perevertaylo
doaj  

Techniques for the Investigation of Segmented Sensors Using the Two Photon Absorption-Transient Current Technique

open access: yesSensors, 2023
The two photon absorption-transient current technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a ...
Sebastian Pape   +3 more
doaj   +1 more source

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