Results 51 to 60 of about 21,298 (316)

Quantum detector tomography of a time-multiplexed superconducting nanowire single-photon detector at telecom wavelengths [PDF]

, 2013
Superconducting nanowire single-photon detectors (SNSPDs) are widely used in telecom wavelength optical quantum information science applications. Quantum detector tomography allows the positive-operator-valued measure (POVM) of a single-photon detector ...
Dorenbos, SN, Walmsley, IA, Natarajan, C.M., Zwiller, V, Walmsley, I.A. (author), Hadfield, R.H. (author), Coldenstrodt-Ronge, H, Zhang, L. (author), Zwiller, Val, Coldenstrodt-Ronge, H. (author), Natarajan, C.M. (author), Natarajan, Chandra M, Zwiller, V., Walmsley, Ian, Dorenbos, S.N. (author), Zhang, Lijian, Zhang, L., Dorenbos, S.N., Hadfield, R., Zwiller, V. (author), Donati, G. (author), Donati, Gaia, Natarajan, CM, Walmsley, Ian A., Coldenstrodt-Ronge, Hendrik, Walmsley, I.A., Hadfield, Robert H, Hadfield, R.H., Dorenbos, Sander N., Donati, G., Donati, G, Zhang, L, Hadfield, RH, Coldenstrodt-Ronge, H.   +33 more
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Electrical transfer, carrier concentration and surface charge analysis of a single-gated cylindrical channel junctionless $p$-type nanowire field-effect transistor for sensor applications

Comptes Rendus. Chimie, 2021
The primary goal of the junctionless nanowire FET is to eliminate the struggle of making junctions and doping in short channel nanowire FETs. Junctions and doping are totally removed while taking the junctionless nanowire FET.
Krishnamoorthy, Umapathi, Shanmugam, Sathish Kumar   +1 more
doaj   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

Nanoscale Research Letters, 2018
We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis.
Hsiang-Hsi Ho, Chun-Lung Lin, Wei-Che Tsai, Liang-Zheng Hong, Cheng-Han Lyu, Hsun-Feng Hsu   +5 more
doaj   +1 more source

Waveguide coupled III-V photodiodes monolithically integrated on Si

Nature Communications, 2022
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon ...
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund   +10 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Whispering gallery modes enhance the near-infrared photoresponse of hourglass-shaped silicon nanowire photodiodes

, 2019
Silicon photodiodes are widely used in applications that require the measurement of the intensity, colour and position of visible light. Silicon is an attractive material for these systems owing to its low cost, low noise, and easy on-chip integration ...
SEO, MYUNGHAE, Kihyun Kim, Seungho Lee, MEYYAPPAN, MEYYA, Hyeonsu Cho, BAEK, CHANG KI, Sol Yoon ry modes enhance the nearinfrared photoresponse of hourglass-shaped silicon nanowire   +6 more
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Ultra-Dense Nano- and Molecular-Electronic Circuits [PDF]

, 2007
This thesis describes research towards the realization of large-scale, ultra-dense nanowire-based circuits. The primary means for the construction of such circuits is the superlattice nanowire pattern transfer (SNAP) technique.
Green, Jonathan Earl
core   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

Advanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici, Gabriele Seguini, Fabiana Taglietti, Roman Gumeniuk, Riccardo Chiarcos, Michele Laus, Johannes Heitmann, Marco Fanciulli, Michele Perego   +8 more
wiley   +1 more source

Theoretical and experimental investigation of III-V semiconductor nanowire heterostructures [PDF]

, 2013
This thesis concerns a theoretical and experimental investigation of two applications of semiconductor nanowires and nanowire heterostructures. First, the development of nanowire-planar tandem solar cells is considered from a theoretical standpoint ...
Foster, Andrew
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