Results 51 to 60 of about 53,263 (293)

Anomalous Pressure‐Temperature Ultrahigh Sensitivities in Atomically Engineered Carbonitride MXenes for Multifunctional Wearable Human–Machine Interfaces: Joint Computational–Experimental Elucidations

Advanced Functional Materials, EarlyView.
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra, Ju‐Hyoung Han, Hyun Jin Kang, Jeong Eun Byun, Seonghun Lee, Sanghyuk Lee, Yeseul Son, Jaeeun Park, Tae Joo Shin, Youngho Kang, Jung Woo Lee, Soon‐Yong Kwon, Soo‐Hyun Kim   +12 more
wiley   +1 more source

Electrical transfer, carrier concentration and surface charge analysis of a single-gated cylindrical channel junctionless $p$-type nanowire field-effect transistor for sensor applications

Comptes Rendus. Chimie, 2021
The primary goal of the junctionless nanowire FET is to eliminate the struggle of making junctions and doping in short channel nanowire FETs. Junctions and doping are totally removed while taking the junctionless nanowire FET.
Krishnamoorthy, Umapathi, Shanmugam, Sathish Kumar   +1 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

Nanoscale Research Letters, 2018
We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis.
Hsiang-Hsi Ho, Chun-Lung Lin, Wei-Che Tsai, Liang-Zheng Hong, Cheng-Han Lyu, Hsun-Feng Hsu   +5 more
doaj   +1 more source

Waveguide coupled III-V photodiodes monolithically integrated on Si

Nature Communications, 2022
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon ...
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund   +10 more
doaj   +1 more source

Probing ultrafast carrier dynamics and nonlinear absorption and refraction in core-shell silicon nanowires

, 2012
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission spectroscopy at photon ...
A K SOOD, A Kar, A Othonosa, C-K Sun, CR Carey, DDD Ma, J Kudrna, J Qi, K Ikeda, K Narayana, K S KARIM, KPH Lui, KPH Lui, LF Cui, M Dinu, M KHORASANINEJAD, M M ADACHI, M Taguchi, MM Adachi, MM Adachi, P Servati, R Agarwal, RA Street, RP Prasankumar, S Kumar, S Kumar, S S SAINI, ST Picraux, SUNIL KUMAR, VR Almeida, Y Cui, Y Dong   +31 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing [PDF]

, 2019
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results.
García, César Pascual, Leturcq, Renaud, Olthuis, Wouter, Rani, Dipti, Rollo, Serena   +4 more
core   +3 more sources

Hidden defects in silicon nanowires [PDF]

Nanotechnology, 2011
Recent publications have reported the presence of hexagonal phases in Si nanowires. Most of these reports were based on 'odd' diffraction patterns and HRTEM images—'odd' means that these images and diffraction patterns could not be obtained on perfect silicon crystals in the classical diamond cubic structure.
den Hertog, Martien, Cayron, Cyril, Gentile, Pascal, Dhalluin, Florian, Oehle, Fabrice, Baron, Thierry, Rouviere, Jean-Luc   +6 more
openaire   +4 more sources

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source