Results 131 to 140 of about 2,146,457 (416)

Tunable 4-channel ultra-dense WDM demultiplexer with III-V photodiodes integrated in silicon-on-insulator [PDF]

open access: yes, 2012
A tunable 4-channel ultra-dense WDM demultiplexer with 0.25nm channel spacing is demonstrated with III-V photodiodes integrated on Silicon-on-Insulator using rib waveguides.
De Heyn, Peter   +4 more
core  

Bi‐Directional Assembly of Boron Nitride µ‐Platelets by Micro‐Molding for Advanced Thermal Interface Materials

open access: yesAdvanced Functional Materials, EarlyView.
Bi‐directionally assembled BN µ‐platelets in micropatterns formed by a micro‐molding method for thermal interface materials are demonstrated. The BN µ‐platelets are vertically aligned selectively, while compressed regions without patterns accommodate horizontally assembled BN µ‐platelets. Through anisotropic orientation, high thermal conductivities for
Young Gil Kim   +12 more
wiley   +1 more source

Inter‐Layer Diffusion of Excitations in 2D Perovskites Revealed by Photoluminescence Reabsorption

open access: yesAdvanced Functional Materials, EarlyView.
Inter‐layer diffusion of photoexcitations is monitored in thin films of the 2D perovskite (PEA)2PbI4 by tracking time‐dependent changes in photoluminescence spectra induced by photon reabsorption effects. A low out‐of‐plane excitation diffusion coefficient of 0.26 × 10−4 cm2 s−1 is determined through 1D diffusion modeling.
Jiaxing Du   +7 more
wiley   +1 more source

Metal-Insulator Transitions in Interacting Disordered Systems [PDF]

open access: yesarXiv, 2000
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition in dilute two-dimensional systems, such as silicon MOSFETs and GaAs/AlGaAs heterostructures.
arxiv  

Optical Retroreflective Marker Fabricated on Silicon-On-Insulator

open access: yesIEEE Photonics Journal, 2011
Optical retroreflective markers provide a strong return signal when illuminated by a source, resulting in an easy way to localize and identify an object.
K. Van Acoleyen   +4 more
doaj   +1 more source

Biointerfacing with AgBiS2 Quantum Dots for Pseudocapacitive Photostimulation

open access: yesAdvanced Functional Materials, EarlyView.
It is demonstrated that AgBiS2 quantum dots exhibit unique photoinduced pseudocapacitive charge transfer properties, enabling efficient light‐to‐electrical energy conversion. These quantum dots facilitate enhanced light absorption and transduction when integrated with ZnO nanowires, which serve as an effective charge transport medium.
Ridvan Balamur   +8 more
wiley   +1 more source

Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic [PDF]

open access: yes
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance ...
arxiv   +1 more source

Single crystal functional oxides on silicon

open access: yesNature Communications, 2016
Synthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate ...
Saidur Rahman Bakaul   +13 more
doaj   +1 more source

Towards the Predicted High Performance of Waveguide Integrated Electro-Refractive Phase Modulators Based on Graphene

open access: yesIEEE Photonics Journal, 2017
Here in this work, we study the electro-refractive modulation of CVD grown single layer graphene placed on top of a silicon microring resonator biased using a polymer electrolyte gate.
Muhammad Mohsin   +5 more
doaj   +1 more source

Silicon-on-insulator ‘HRes’ circuit

open access: yesElectronics Letters, 1994
Retinal circuits in bulk CMOS are complicated by the need to compensate for the back-gate effect. However, partially depleted silicon-on-insulator devices have a greatly reduced back-gate effect compared to bulk CMOS. Silicon retinae implemented using SOI technology would therefore be smaller and simpler than the bulk CMOS equivalent.
R.J.T. Bunyan, G.F. Marshall, S. Collins
openaire   +2 more sources

Home - About - Disclaimer - Privacy