Results 151 to 160 of about 130,736 (397)

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source

Fast Adiabatic Mode Evolution Assisted 2 × 2 Broadband 3 dB Coupler Using Silicon-on-Insulator Fishbone-like Grating Waveguides. [PDF]

Nanomaterials (Basel), 2023
Xue Y, Zhang L, Ren Y, Lei Y, Sun X.
europepmc   +1 more source

Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers [PDF]

, 1999
F. Gámiz, J.B. Roldán, P. Cartujo, J. E. Carceller, J. A. López‐Villanueva, S. Rodrı́guez   +5 more
openalex   +1 more source

High Dynamic Range Thin‐Film Resistive Flow Sensors for Monitoring Diverse Biofluids

Advanced Functional Materials, EarlyView.
Thin‐film resistive flow sensors with thermoresistive and piezoresistive mechanisms are developed for biofluid monitoring. Fabricated using biocompatible materials and laser micromachining, the devices achieve sub‐millimeter dimensions and a broad dynamic range.
Latifah Almulla, Massimo Mariello, Christopher M Proctor   +2 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Micromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan   +5 more
doaj   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

Silicon Nitride-on-Insulator Photonics Polarisation Convertor

Приборы и методы измерений
Photonic integrated circuits constitute a vital component of contemporary telecommunications systems, facilitating traffic management and reducing energy consumption.
D. M. Mokhovikov, E. S. Barbin, T. G. Nesterenko, A. A. Talovskaya, A. S. Myrzakhmetov, I. V. Kulinich, P. F. Baranov, D. P. Il’yaschenko   +7 more
doaj   +1 more source

Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison [PDF]

Журнал нано- та електронної фізики, 2011
During last few decade continuous device performance improvements have been achieved through a combination of device scaling, new device structures and material property improvement to its fundamental limits.
Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar   +3 more
doaj  

"Silicon-On-Insulator"-Based Nanosensor for the Revelation of MicroRNA Markers of Autism. [PDF]

Genes (Basel), 2022
Ivanov YD, Malsagova KA, Goldaeva KV, Pleshakova TO, Shumov ID, Galiullin RA, Kapustina SI, Iourov IY, Vorsanova SG, Ryabtsev SV, Popov VP, Archakov AI.   +11 more
europepmc   +1 more source