Results 151 to 160 of about 2,031,642 (187)

Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

IEEE Transactions on Electron Devices, 2016
Compared with bulk-Si wafer, AlxGa1-xN/gallium nitride (GaN) heterostructures grown on a 150-mm silicon-on-insulator (SOI) substrate with a 35-nm-thick Si overlayer are shown to have ~50% less wafer bowing.
W. H. Tham, D. Ang, L. Bera, S. Bin Dolmanan, T. Bhat, V. K. Lin, S. Tripathy   +6 more
semanticscholar   +1 more source

Polarization independent adiabatic 3-dB coupler for silicon-on-insulator

Conference on Lasers and Electro-Optics, 2017
We demonstrate a polarization independent adiabatic 3-dB coupler for the silicon-on-insulator platform, with a measured bandwidth of 100 nm and power splitting ratios of 3 ± 0.7dB for both the transverse electric and transverse magnetic modes.
Luhua Xu, Yun Wang, D Patel, E. El-Fiky, Zhenping Xing, Rui Li, M. G. Saber, M. Jacques, D. Plant   +8 more
semanticscholar   +1 more source

Optical computing on silicon-on-insulator-based photonic integrated circuits

International Conference on ASIC, 2017
The advancement of photonic integrated circuits (PICs) brings the possibility to accomplish on-chip optical interconnects and computations. Optical computing, as a promising alternative to traditional CMOS computing, has great potential advantages of ...
Zheng Zhao, Z. Wang, Zhoufeng Ying, Shounak Dhar, Ray T. Chen, D. Pan   +5 more
semanticscholar   +1 more source

RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

IEEE Transactions on Electron Devices, 2017
A high power-added efficiency and low dynamic on-resistance ( $R_{ \mathrm{\scriptscriptstyle ON}})$ AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm ...
H. Chiu, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, H. Kao, Chih-Wei Hu, R. Xuan   +6 more
semanticscholar   +1 more source

Silicon photonics beyond silicon-on-insulator

, 2017
The standard platform for silicon photonics has been ridge or channel waveguides fabricated on silicon-on-insulator (SOI) wafers. SOI waveguides are so versatile and the technology built around it is so mature and popular that silicon photonics is almost
J. Chiles, S. Fathpour
semanticscholar   +1 more source

Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

IEEE Transactions on Nuclear Science, 2015
A new geometry-aware single-event enabled compact model for sub-50 nm partially depleted silicon-on-insulator MOSFETs is presented. The model extends the bias-dependent single-event modeling methods with an integrated parasitic BJT using the SPICE Gummel
J. Kauppila, L. Massengill, D. Ball, M. Alles, peixiong zhao, T. D. Loveless, J. Maharrey, R. Quinn, J. Rowe   +8 more
semanticscholar   +1 more source

Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure

IEEE Transactions on Electron Devices, 2015
Ultimate scaling of Si MOSFETs leads to extremely thin and short channels, which are justifiably modeled at the atomic level. Currently, hydrogen passivation of the channel is used in device models, as a compromise between efficiency and accuracy.
S. Markov, B. Aradi, C. Yam, Hang Xie, T. Frauenheim, Guanhua Chen   +5 more
semanticscholar   +1 more source

Multi-color imaging with silicon-on-insulator diode uncooled infrared focal plane array using through-hole plasmonic metamaterial absorbers

IEEE/LEOS International Conference on Optical MEMS, 2015
This paper reports a silicon-on-insulator diode uncooled infrared focal plane array (IRFPA) with through-hole plasmonic metamaterial absorbers (TH-PLMAs) for multi-color imaging with a 320×240 array format. Through-holes formed on the PLMA can reduce the
D. Fujisawa, S. Ogawa, H. Hata, Mitsuharu Uetsuki, Koji Misaki, Yousuke Takagawa, M. Kimata   +6 more
semanticscholar   +1 more source

Optically tunable single passband microwave photonic filter based on phase-modulation to intensity-modulation conversion in a silicon-on-insulator microring resonator

International Topical Meeting on Microwave Photonics, 2015
We propose and experimentally demonstrate a single passband frequency-tunable microwave photonic filter (MPF) based on phase-modulation to intensity-modulation conversion in an optically pumped silicon-on-insulator (SOI) microring resonator (MRR). In the
N. Ehteshami, Weifeng Zhang, Jianping Yao   +2 more
semanticscholar   +1 more source

The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs

IEEE transactions on nanotechnology, 2015
In this study, we investigate the impact of junction doping distribution (LDD/halo) on variations and asymmetry of device characteristics for fully depleted silicon on insulator (FDSOI) with ultrathin buried oxide layer nMOSFET.
W. Yeh, Cheng-li Lin, T. Chou, Kehuey Wu, Jiann-Shiun Yuan   +4 more
semanticscholar   +1 more source