Results 151 to 160 of about 100,297 (354)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

On-chip mid-infrared silicon-on-insulator waveguide methane sensor using two measurement schemes at 3.291 μm. [PDF]

open access: yesFront Chem, 2022
Zhao H   +7 more
europepmc   +1 more source

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration [PDF]

open access: gold, 2022
Aleksandra Bojar   +7 more
openalex   +1 more source

Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications

open access: yesAdvanced Functional Materials, EarlyView.
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner   +9 more
wiley   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim   +6 more
wiley   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

open access: yesAdvanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima   +2 more
wiley   +1 more source

Thermo-optic phase shifters based on silicon-on-insulator platform: state-of-the-art and a review. [PDF]

open access: yesFront Optoelectron, 2022
Liu S   +7 more
europepmc   +1 more source

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