Results 31 to 40 of about 1,999,888 (218)

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Design of an Athermal Interferometer Based on Tailored Subwavelength Metamaterials for On-Chip Microspectrometry

IEEE Photonics Journal, 2019
Temperature dependence is one of the main challenges of the silicon-on-insulator platform due to the large thermo-optic coefficient of its core material.
Umair A. Korai, Alaine H. Bermello, Michael J. Strain, Ivan Glesk, Aitor V. Velasco   +4 more
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Modeling and Analysis of SOI Gratings-Based Opto-Fluidic Biosensor for Lab-on-a-Chip Applications

Photonics, 2019
The design, modeling, and analysis of a silicon-on-insulator (SOI) grating coupler integrated with a microfluidic channel for lab-on-a-chip applications are presented. The grating coupler was designed to operate at 1310 nm.
Venkatesha Muniswamy, Prasant Kumar Pattnaik, Narayan Krishnaswamy   +2 more
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Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Nanophotonics, 2020
The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity.
Jiang Hao, Nie Changbin, Fu Jintao, Tang Linlong, Shen Jun, Sun Feiying, Sun Jiuxun, zhu Meng, Feng Shuanglong, Liu Yang, Shi Haofei, Wei Xingzhan   +11 more
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Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

IEEE Journal of the Electron Devices Society, 2017
Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide- semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu, Huazhen Liu, Qianqian Xu, Luwen Wang, Jing Wang, Shichang Chen, Peng Zhao, Ying Wang, Gaofeng Wang   +8 more
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Lighting up silicon nanoparticles with Mie resonances

Nature Communications, 2018
As an indirect semiconductor, silicon shows notoriously inefficient luminescence. Here, the authors utilize the Mie resonances in silicon nanoparticles to demonstrate visible white-light emission, both from free-standing spheres and particles etched on a
Chengyun Zhang, Yi Xu, Jin Liu, Juntao Li, Jin Xiang, Hui Li, Jinxiang Li, Qiaofeng Dai, Sheng Lan, Andrey E. Miroshnichenko   +9 more
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Hyperuniform disordered waveguides and devices for near infrared silicon photonics

Scientific Reports, 2019
We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform ...
Milan M. Milošević, Weining Man, Geev Nahal, Paul J. Steinhardt, Salvatore Torquato, Paul M. Chaikin, Timothy Amoah, Bowen Yu, Ruth Ann Mullen, Marian Florescu   +9 more
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Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

Applied Physics Express
Drag between the electron and the hole layers formed in a silicon-on-insulator MOSFET, with the estimated interlayer distance as small as 18 nm, is investigated.
Nabil Ahmed, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono   +4 more
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All-Optical Wavelength Multicasting in Quadruple Resonance-Split Coupled Silicon Microring Cavity

IEEE Photonics Journal, 2018
We demonstrate an all-optical four-channel wavelength multicasting in a coupled silicon microring resonator system. The scheme is based on two-photon-absorption-induced free carrier dispersion in silicon.
Awanish Pandey, Shankar Kumar Selvaraja
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Lasing in silicon–organic hybrid waveguides

Nature Communications, 2016
On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with
Dietmar Korn, Matthias Lauermann, Sebastian Koeber, Patrick Appel, Luca Alloatti, Robert Palmer, Pieter Dumon, Wolfgang Freude, Juerg Leuthold, Christian Koos   +9 more
doaj   +1 more source