Results 51 to 60 of about 100,297 (354)

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

Ultrafast all-optical wavelength conversion in silicon waveguides using femtosecond pump-probe pulses [PDF]

, 2006
Experimental results on ultrafast all-optical wavelength conversion in silicon-on-insulator waveguides are presented. Red and blue shifts of 10nm have been observed in femtosecond pump-probe experiments.
Dekker, R., Driessen, A., Först, M., Moormann, C., Niehusmann, J., Wahlbrink, T.   +5 more
core   +4 more sources

Influence of Sample Preparation and Processing Procedures on the Thermal Diffusivity of MgO‐C Refractories

Advanced Engineering Materials, EarlyView.
The thermal diffusivity of MgO‐C refractories is highly sensitive to sample preparation and processing procedures. In this article, the effects of coking sequence, machining conditions, structural inhomogeneity, and graphite coating application on measurements using laser flash apparatus are systematically investigated.
Luyao Pan, Rhena Wulf, Till M. J. Stadtmüller, Christos G. Aneziris, Tobias M. Fieback   +4 more
wiley   +1 more source

High-Power-Compatible Thick Silicon-on-Insulator Waveguide: An Implementation in Optical Phased Array

IEEE Photonics Journal
High-power transmission capability is a critical yet insufficiently explored frontier in integrated photonics. Owing to the restricted optical cross-sectional area of the 220 nm-thick silicon layer, conventional SOI platform is incapable of managing the ...
Jingsi Chen, Daixin Lian, Shi Zhao, Zhituo Chen, Yongqi Ye, Jingye Chen, Yaocheng Shi   +6 more
doaj   +1 more source

Silicon-based nanochannel glucose sensor [PDF]

, 2008
Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase.
Dzyadevich, Katherine A. Gibney, Pritiraj Mohanty, Seki, Shul’ga, Shyamsunder Erramilli, Sohn, Xihua Wang, Yu Chen   +8 more
core   +1 more source

Exploring Dipolar Dynamics and Ionic Transport in Metal‐Organic Frameworks: Experimental and Theoretical Insights

Advanced Functional Materials, EarlyView.
In this study, the interplay of dipolar dynamics and ionic charge transport in MOF compounds is investigated. Synthesizing the novel structure CFA‐25 with integrated freely rotating dipolar groups, local and macroscopic effects, including interactions with Cs cations are explored.
Ralph Freund, Arthur Schulz, Peter Lunkenheimer, Maryana Kraft, Thomas Bergler, Harald Oberhofer, Dirk Volkmer   +6 more
wiley   +1 more source

Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE [PDF]

, 2015
A four-channel cascaded MZl based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator.
Absil, P, Bogaerts, Wim, De Heyn, P, Dwivedi, Sarvagya, Van Campenhout, J   +4 more
core   +2 more sources

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source