Results 51 to 60 of about 130,736 (397)

A tunable, dual mode field-effect or single electron transistor

, 2012
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali, B. Roche, B. Voisin, Fenouillet-Beranger C., M. Sanquer, M. Vinet, R. Wacquez, V. Deshpande, Weber O., X. Jehl   +9 more
core   +1 more source

Silicon-on-insulator microring resonators for photonic biosensing applications [PDF]

, 2013
Silicon-on-insulator microring resonators have proven to be an excellent platform for label-free nanophotonic biosensors. The high index contrast of the silicon-on-insulator waveguides allows for fabrication of micrometer size sensors.
Bienstman, Peter, Dubruel, Peter, Goes, Arne, Werquin, Sam   +3 more
core   +1 more source

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

IEEE Photonics Journal, 2017
In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10  $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text ...
B. Dong, Xin Guo, C. Ho, Bo Li, Hong Wang, Chengkuo Lee, Xianshu Luo, G. Lo   +7 more
semanticscholar   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Comparative Wear and Friction Analysis of Sliding Surface Materials for Hydrostatic Bearing under Oil Supply Failure Conditions

Advanced Engineering Materials, EarlyView.
Hydrostatic bearings excel in high‐precision applications, but their performance hinges on a continuous external supply. This study evaluates various material combinations for sliding surfaces to mitigate damage during supply failures or misalignment and to discover the most effective materials identified for enhancing the reliability and efficiency of
Michal Michalec, Lukáš Daněk, Jan Foltýn, Petr Svoboda, Carsten Gachot, Martin Hartl, Ivan Křupka   +6 more
wiley   +1 more source

Modeling and Analysis of SOI Gratings-Based Opto-Fluidic Biosensor for Lab-on-a-Chip Applications

Photonics, 2019
The design, modeling, and analysis of a silicon-on-insulator (SOI) grating coupler integrated with a microfluidic channel for lab-on-a-chip applications are presented. The grating coupler was designed to operate at 1310 nm.
Venkatesha Muniswamy, Prasant Kumar Pattnaik, Narayan Krishnaswamy   +2 more
doaj   +1 more source

Beyond Order: Perspectives on Leveraging Machine Learning for Disordered Materials

Advanced Engineering Materials, EarlyView.
This article explores how machine learning (ML) revolutionizes the study and design of disordered materials by uncovering hidden patterns, predicting properties, and optimizing multiscale structures. It highlights key advancements, including generative models, graph neural networks, and hybrid ML‐physics methods, addressing challenges like data ...
Hamidreza Yazdani Sarvestani, Surabhi Nadigotti, Erfan Fatehi, Derek Aranguren van Egmond, Behnam Ashrafi   +4 more
wiley   +1 more source

Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

IEEE Journal of the Electron Devices Society, 2017
Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide- semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu, Huazhen Liu, Qianqian Xu, Luwen Wang, Jing Wang, Shichang Chen, Peng Zhao, Ying Wang, Gaofeng Wang   +8 more
doaj   +1 more source