Results 51 to 60 of about 2,146,457 (416)
Silicon grating structures for optical fiber interfacing and III-V/silicon opto-electronic components [PDF]
In this paper, we review our work on efficient, broadband and polarization independent interfaces between a silicon-on-insulator photonic IC and a single-mode optical fiber based on grating structures.
Baets, Roel+8 more
core +1 more source
Temperature dependence of ambipolar diffusion in silicon-on-insulator [PDF]
Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned below the bandgap, with 200-fs temporal and 3-micrometer spatial resolution.
arxiv +1 more source
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo+2 more
doaj +1 more source
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics
In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text ...
B. Dong+7 more
semanticscholar +1 more source
Al transmon qubits on silicon-on-insulator for quantum device integration [PDF]
We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried
A. Keller+5 more
semanticscholar +1 more source
Deposited low temperature silicon GHz modulator [PDF]
The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick ...
arxiv +1 more source
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane+3 more
doaj +1 more source
Graphene-Silicon-On-Insulator (GSOI) Schottky Diode Photodetectors [PDF]
Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10's-100's of kHz for wavelength $\lambda >$ 500nm.
arxiv +1 more source
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger+5 more
doaj +1 more source
NEMS-based optical phase modulator fabricated on silicon-on-insulator [PDF]
We present a compact low-power optical phase modulator on Silicon-On-Insulator consisting of an under-etched slot waveguide.
Baets, Roel+4 more
core +1 more source