Results 201 to 210 of about 3,859 (261)

Transconductance of Silicon-on-insulator (SOI) MOSFET's

IEEE Electron Device Letters, 1985
Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET's has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices.
J -P Colinge
exaly   +2 more sources

Stress-induced birefringence in silicon-on-insulator (SOI) waveguides

SPIE Proceedings, 2004
We show that stress engineering can be used to adjust the SOI waveguide birefringence to the stringent polarization tolerances expected of commercial devices, using only standard silicon processes. With decreasing device dimensions and high index contrast the waveguide birefringence becomes increasingly sensitive to device geometry.
Winnie N Ye, Pavel Cheben, N Garry Tarr
exaly   +2 more sources

Silicon-on-insulator (SOI) as a Photonics Platform

ECS Meeting Abstracts, 2006
Abstract not Available.
Dan-Xia Xu, Pavel Cheben, Boris Lamontagne, Siegfried Janz, Winnie Ye   +4 more
openaire   +1 more source

Development of small silicon modulators in silicon-on-insulator (SOI)

SPIE Proceedings, 2003
Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease
Ching Eng Png, Graham T. Reed, Ragheid M. Atta, Graham J. Ensell, Alan G. R. Evans   +4 more
openaire   +1 more source

Silicon-on-insulator (SOI) structures for pressure sensors

Sensors and Actuators A: Physical, 1991
Abstract The zone-melting-recrystallization method of preparating silicon-on-insulator (SOI) films, its variations, advantages, disadvantages, and its applicability for pressure sensors are considered in this article. The method of artificial epitaxy (graphoepitaxy) allows microstructures in SOI films to be controlled.
Eugene I. Givargizov, Alexander B. Limanov, Gennadi D. Prjakhin, Vladimir I. Vaganov   +3 more
openaire   +1 more source

High voltage silicon-on-insulator (SOI) MOSFETs

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, 2002
Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results obtained for these devices are presented. The devices can be implemented using a CMOS-SOI compatible process.
Q. Lu, P. Ratnam, C.A.T. Salama
openaire   +1 more source

Silicon-on-insulator (SOI) by bonding and ETCH-back

1985 International Electron Devices Meeting, 1985
A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum.
J.B. Lasky, S.R. Stiffler, F.R. White, J.R. Abernathey   +3 more
openaire   +1 more source

VLS growth of silicon whiskers on a patterned silicon-on-insulator (SOI) wafer

Journal of Crystal Growth, 1996
Abstract An array of VLS silicon whiskers, over 500 μm in length, under 20 μm diameter and 60 μm in pitch, has been grown on the silicon pattern of a SOI wafer. The “mesa method”, in which VLS whiskers were grown on silicon mesas topped with gold hats, was successfully applied to determine growth sites to micrometer accuracy.
Yoshihiko Okajima, Masaru Amemiya, Kazuo Kato, Shin'ichiro Asai   +3 more
openaire   +1 more source

Basics of Silicon-on-Insulator (SOI) Technology

2004
Silicon is by far the most widely used semiconductor material. It is abundant in earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown on it.
openaire   +1 more source

Transient performance of Silicon-On-Insulator (SOI) Phase Modulator

AIP Conference Proceedings, 2011
Silicon as a photonic medium has a unique advantages. It is transparent in the range of optical telecommunications wavelengths (1.3 and 1.55µm) and has a high index of refraction, which allows for the fabrication of high-index-contrast submicrometer structures.
A. R. Hanim, H. Hazura, B. Mardiana, Sahbudin Shaari, P. S. Menon, Abdul Manaf Hashim, Vijay K. Arora   +6 more
openaire   +1 more source