Results 211 to 220 of about 3,859 (261)

Electrical characteristics of silicon-on-insulator (SOI) phase modulator

2011 IEEE Regional Symposium on Micro and Nano Electronics, 2011
This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss.
Hanim Abdul Razak, Hazura Haroon, Mardiana Bidin, Wan Maisarah Mukhtar, ZulAtfyi Fauzan Mohammed Napiah, P. Susthitha Menon   +5 more
openaire   +1 more source

Reflections in Silicon on Insulator (SOI) Waveguides and Ring Resonators

Integrated Photonics Research and Applications/Nanophotonics, 2006
Unwanted reflections in SOI waveguides are investigated. In a typical waveguide, 2.5 % of the propagation loss is actually being reflected backwards. Unless corrected, this leads to artifacts in the performance of ring resonator devices.
S. J. Spector, T. M. Lyszczarz, M. W. Geis, J. Yoon, D. M. Lennon, S. Deneault   +5 more
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Electrical activation of arsenic implanted in silicon on insulator (SOI)

Journal of Physics D: Applied Physics, 2007
Electrical activation of arsenic implanted in silicon on insulator (SOI) was studied. Two SOI structures with different Si overlayers and buried oxide thicknesses were used in this work. The As+ implantations were performed with a single energy of 20 keV to doses of 5 × 1014 cm−2 or 2 × 1015 cm−2 in both substrates.
R M de Oliveira, M Dalponte, H Boudinov
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Multimode Interference (MMI) Couplers in SOI (Silicon-on-insulator)

Integrated Photonics Research, 1995
Silicon based integrated optics is attracting an increasing amount of interest due to low inherent loss at 1.3 μm and 1.5 μm and to the potential for transforming VLSI techniques from microelectronics to integrated optics. Different schemes for waveguides based on silicon technology have been proposed and examined [1-3]. Kurdi et al.
Thomas Zinke, Uwe Fischer, Klaus Petermann   +2 more
openaire   +1 more source

Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics?

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), 2005
With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics.
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Silicon-on-insulator SOI as a photonics platform

2005
12th International Symposium on SOI Technology and Devices, May 2005, Quebec ...
Xu, D-X, Delâge, André, Cheben, Pavel, Lamontagne, Boris, Janz, Siegfried, Ye, W.   +5 more
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The future of silicon-on-insulator (SOI) technology in microelectronic systems

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2005
After many years of materials development and circuit research, silicon-on-insulator (SOI) technology clearly has become a viable approach for high performance microelectronics. As semiconductor technology continues to scale, the value of an SOI materials platform continues to expand.
Z.J. Lemnios, D.J. Radack, J.C. Zolper
openaire   +1 more source

Ultrathin Silicon-an-Insulator (SOI) Wafer for Compliant Substrate

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017
Compliant substrate is one of the most promising approaches for heteroepitaxy of the semiconductor devices. SOI wafer is the only commercial structure used for the compliant substrate researches. Yet, previous studies reported ineffectiveness of SOI as a compliant substrate for thickness regions above 10 nm.
Shinyoung Noh, Anita Ho-Baillie, Stephen Bremner, Martin A. Green, Xiaojing Hao   +4 more
openaire   +1 more source

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006
A novel partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with a T-shaped body (TSB) is proposed for the first time. Simulation results demonstrate that the proposed structure provides nano-scaled PD SOI devices with much better short channel effect immunity and sub-threshold characteristics than those of UTB SOI devices.
Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, Shengdong Zhang   +5 more
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Laser Processing in Silicon on Insulator (SOI) Technologies

1984
Silicon on insulator (SOI) technologies are an attractive alternative for VLSI circuit manufacturing, owing to such advantages as reduced parasitic capacitances, latch-up immunity and insensitivity to alpha particles. SOI technologies may be also viewed as a first but necessary step towards 3-D integration.
openaire   +1 more source