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Extreme-submicrometer silicon-on-insulator (SOI) MOSFETs.
1994Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994. ; Includes bibliographical references (leaves 200-213). ; by Lisa T. Su. ; Ph.D.
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Overview of fully depleted silicon-on-insulator (SOI) technology
Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488), 2004This paper examines the advantages and disadvantages of thin-film, fully depleted (FD) silicon-on-insulator (SOI) technology devices compared to bulk devices, describing their desirability and suitability for low-voltage and low-power very large-scale integrated (VLSI) circuits.
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MOS-controlled diode (MCD) on silicon-on-insulator (SOI)
IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468), 2004The performance of the diode is an importance factor in achieving good efficiency for a power integrated circuit. In this paper, a MOS-controlled diode (MCD) for power integrated circuits is presented. The proposed structure utilizes active control to switch the diode between unipolar and bipolar operating modes so that the device can operate at its ...
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Process and Simulation design of Silicon-On-Insulator (SOI) NMOS
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023Zih-Fei Chen +4 more
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SOI (Silicon-on-insulator)—materials and devices
Microelectronics Reliability, 1997openaire +1 more source
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2009
Alexandra Abbadie
exaly
Alexandra Abbadie
exaly
Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors
IEEE Electron Device Letters, 1988J C Sturm, J -P Colinge
exaly