Results 101 to 110 of about 908,384 (292)

Silicic thermally stabilized p–i–n-photodiode

Технологія та конструювання в електронній апаратурі, 2006
A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range ...
Yu. G. Dobrovolsky
doaj  

Multispectral UV Imaging on Capacitive CMOS Arrays Enabled by Solution‐Processed Metal‐Oxide Nanoparticles

Advanced Science, EarlyView.
Ultraviolet (UV) imagers are important for a variety of applications but often require dedicated semiconductor process flows. Here, a versatile capacitive CMOS platform is transformed into a visible‐blind, multispectral UV imager through post‐CMOS functionalization with solution‐processed metal‐oxide nanoparticles. The UV‐induced photodielectric effect
Suman Kundu, Tao Shen, Kai Betlem, Murali K. Ghatkesar, Peter G. Steeneken, Frans P. Widdershoven   +5 more
wiley   +1 more source

Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

Scientific Reports, 2017
An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO ...
Sung Heo, Jooho lee, Seong Heon Kim, Dong-Jin Yun, Jong-Bong Park, Kihong Kim, NamJeong Kim, Yongsung Kim, Dongwook Lee, Kyu-Sik Kim, Hee Jae Kang   +10 more
doaj   +1 more source

Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond

Advanced Science, EarlyView.
Although the doubly negative charge state of the SiV center in diamond is predicted to ionize only in the ultraviolet and is therefore considered optically inaccessible, we demonstrate visible‐range photoelectric imaging enabled by a previously unrecognized regime of laser‐assisted tunneling. ABSTRACT The investigation of optically active point defects
Ilia Chuprina, Gergő Thiering, Emilie Bourgeois, Anna Ermakova, Dmitry Budker, Adam Gali, Milos Nesladek, Petr Siyushev, Fedor Jelezko   +8 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Comparative Analysis of the Selected Photoreceiver Input Stages in Terms of Noise

Sensors
Semiconductor radiation detectors usually use a specific signal conditioning circuit, ensuring the required detection system parameters. This paper details the noise properties of specific input stages in photoreceivers that detect various types of ...
Krzysztof Achtenberg, Zbigniew Bielecki
doaj   +1 more source

Planar sensors for dosimetry in mixed gamma-neutron fields [PDF]

Ядерна фізика та енергетика, 2007
Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields.
I. E. Anokhin, O. S. Zinets, A. B. Rosenfeld, M. Yudelev, V. L. Perevertailo   +4 more
doaj  

Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single‐Layer TADF Organic Light‐Emitting Diodes

Advanced Electronic Materials, EarlyView.
An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert‐Jan A. H. Wetzelaer   +4 more
wiley   +1 more source

Formation of Light‐Emitting Defects in Ag‐Based Memristors

Advanced Electronic Materials, EarlyView.
How does a memristor begin to emit light‐before it even conducts? This work reveals that nanoscale silver clusters form, diffuse, and aggregate during activation, driving early photoluminescence ahead of current flow. Linking these precursor dynamics to later electroluminescence, it uncovers the origins of light emission and enables precise control of ...
Diana Singh, Maciej Ćwierzona, Régis Parvaud, Sebastian Maćkowski, Alexandre Bouhelier   +4 more
wiley   +1 more source

Indicators for Assessing the Combustion Intensity of Coal Particles Using a Single UV Sensor

Journal of Sensor and Actuator Networks
This paper deals with the evaluation of the combustion intensity of coal particles on the basis of measurement data (UV radiation) from a scanning point photodiode. UV radiation is measured using a custom UV scanner at different distances from the burner
Dariusz Choiński, Krzysztof Stebel, Andrzej Malcher, Paweł Bocian, Beata Glot, Witold Ilewicz, Piotr Skupin, Patryk Grelewicz, J. Angela Jennifa Sujana   +8 more
doaj   +1 more source