Results 81 to 90 of about 908,384 (292)

Wavelength‐Dependent Photobiomodulation Regulates Macrophage Polarization via Mitochondrial Dynamics and Metabolic Reprogramming

Advanced Science, EarlyView.
Light wavelength encodes distinct macrophage fates through mitochondrial and metabolic remodeling. Red 625 nm irradiation induces glycolysis, mitochondrial fission, and M1 polarization, whereas near‐infrared 850 nm irradiation promotes fatty acid oxidation, mitochondrial fusion, and M2 polarization.
Qiusheng Shi, Hao Jia, Jianfei Dong, Linhao Li, Jingqi Cao, Xun Chen, Zhenzhen Jia, Jing Na, Zhijie Yang, Xinyuan Chen, Yubo Fan, Shuhua Yue, Lisha Zheng   +12 more
wiley   +1 more source

III-V on silicon avalanche photodiodes by heteroepitaxy

Optics Letters, 2019
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k∼0.2, as InAlAs APDs on InP.
Yuan Yuan, Daehwan Jung, Keye Sun, Jiyuan Zheng, Andrew H. Jones, John E. Bowers, Joe C. Campbell   +6 more
openaire   +2 more sources

Sulfonated Bathocuproine Derivatives as Chemically Bonded Buried‐Interface Engineers for n–i–p Perovskite Solar Cells

Advanced Science, EarlyView.
A BCP‐derived buried‐interface strategy establishes Na‐BCS as a chemically bonded molecular bridge. By combining sulfonate anchoring to SnO2 with preserved BCP–Pb2+ coordination, Na‐BCS simultaneously passivates oxide‐ and perovskite‐side defects, suppresses non‐radiative recombination, and delivers a surface recombination velocity of 8.6 cm s−1, a ...
Dong Hyun Kim, Min Ju Jeong, SeungMin Lee, Oui Jin Oh, Mun Young Woo, Sung Yong Kim, Dong Hun Kang, Chan Young Kim, Chan Ho Shin, Jun Hong Noh   +9 more
wiley   +1 more source

A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz

Micromachines
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication.
Chao Cheng, Jintao Xue, Xishan Yu, Jifang Mu, Binhao Wang   +4 more
doaj   +1 more source

TWDM-PON With Signal Remodulation and Rayleigh Noise Circumvention for NG-PON2

IEEE Photonics Journal, 2013
We propose and demonstrate a 40-Gb/s (4 × 10 Gb/s) downstream and 10-Gb/s (4 × 2.5 Gb/s) upstream time-wavelength-division-multiplexed passive optical network (TWDM-PON) using signal remodulation. Here, a downstream differential-phase-shift-
C. W. Chow, C. H. Yeh, K. Xu, J. Y. Sung, H. K. Tsang   +4 more
doaj   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

Advanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang, San Nam, Dayul Nam, In‐Soo Kim, Myung‐Gil Kim, Sung Kyu Park, Yong‐Hoon Kim   +6 more
wiley   +1 more source

Autonomous High‐Throughput Characterization of Liquid‐Liquid Phase Behavior

Advanced Science, EarlyView.
This study introduces an automated dual modality platform, combining asymmetric capacitance deviation and multiangle turbidimetry, for high‐throughput characterization of liquid‐liquid phase behavior across chemically diverse fluid systems. The platform enables miscibility classification, resolution of phase separation kinetics and emulsion stability ...
Tarek Eid, Maryam Ebrahimiazar, Mohammad Zargartalebi, David Sinton   +3 more
wiley   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Si-HgTe Quantum Dot Visible-Infrared Photodetector

Nanomaterials
Silicon photodetectors are well developed, with the advantage of their low cost and easy fabrication. However, due to the semiconductor band gap limitation, their detection wavelength is limited in the visible and near-infrared ranges.
Lei Qian, Xue Zhao, Kenan Zhang, Chen Huo, Yongrui Li, Naiquan Yan, Feng Shi, Xing Peng, Menglu Chen   +8 more
doaj   +1 more source

DESIGN AND FABRICATION OF NANOSTRUCTURES SILICON PHOTODIODE

, 2011
A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes,Of nanostructures porous silicon prepared by laser assisted etching .  Photoresponse was
A. Alwan, A. A. Jabbar
semanticscholar   +1 more source