Results 61 to 70 of about 908,384 (292)

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

Optics Express, 2015
We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si) surface passivation technique effectively suppress the dark current originating from the mesa sidewall of the Ge(0.95)Sn(0.05) on Si (Ge(0.95)Sn(0.05)/Si) p-i-n ...
Yuan Dong, Wei Wang, D. Lei, X. Gong, Qian Zhou, S. Lee, W. Loke, S. Yoon, E. Tok, G. Liang, Y. Yeo   +10 more
semanticscholar   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

PRECISE THROUGHPUT DETERMINATION OF THE PanSTARRS TELESCOPE AND THE GIGAPIXEL IMAGER USING A CALIBRATED SILICON PHOTODIODE AND A TUNABLE LASER: INITIAL RESULTS [PDF]

, 2010
We have used a precision-calibrated photodiode as the fundamental metrology reference in order to determine the relative throughput of the PanSTARRS telescope and the Gigapixel imager, from 400 nm to 1050 nm.
C. Stubbs, P. Doherty, C. Cramer, G. Narayan, Yorke J. Brown, K. Lykke, J. Woodward, J. Tonry   +7 more
semanticscholar   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Characteristics of Nanostructure Silicon Photodiode Using Laser Assisted Etching

, 2013
We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532,650 and 810 nm), a (metal/nanostructure silicon/metal) photodiode has been ...
N. M. Ahmed, Y. Al-Douri, A. Alwan, A. A. Jabbar, Ghassan. E. Arif   +4 more
semanticscholar   +1 more source

Deterministic Integration of Quantum Emitters and Optical Cavities in a Van Der Waals Crystal

Advanced Optical Materials, EarlyView.
The work demonstrates fabrication of Circular Bragg Grating (CBG) cavities with embedded emitters in hBN. The cavities are fabricated around a pre‐characterised quantum emitter. The integrated platform enables light matter interaction and access to brighter emitters and spins in hBN.
James Liddle‐Wesolowski, Otto Cranwell Schaeper, Nathan Coste, Benjamin Whitefield, Evan Williams, Helen Zhi Jie Zeng, Mehran Kianinia, Anastasiia Zalogina, Igor Aharonovich   +8 more
wiley   +1 more source

Silicon p-i-n Mesa-Photodiode Technology

East European Journal of Physics
The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route.
Mykola S. Kukurudziak, Volodymyr M. Lipka, Vyacheslav V. Ryukhtin   +2 more
doaj   +1 more source

Rapid thermal annealing in silicon diode and photodiode technologies [PDF]

Modern Electronic Materials
The effect of rapid thermal annealing in H2 atmosphere on the ohmic properties of contacts on the basis of two-layered transition metals (e.g. Ti, Ni, Pd and Cr) and Au compositions on р+-Si has been studied.
Aleksandra S. Kim, Natalya A. Perevedentseva, Sergey Yu. Yurchuck, Fedor D. Korzhov   +3 more
doaj   +3 more sources