Results 41 to 50 of about 562,978 (284)

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

Advanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin, Axel Printschler, William Roberts, Jonas L. Hiller, Patrick Michel, Martin Eberle, Marco Hammer, Md Tarik Hossain, Andrey Turchanin, Marcus Scheele   +9 more
wiley   +1 more source

A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines, 2020
Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems.
Wenhao Zhi, Qingxiao Quan, Pingping Yu, Yanfeng Jiang   +3 more
doaj   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

East European Journal of Physics
The results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions.
Sharifa B. Utamuradova, Khodjakbar S. Daliev, Shakhrukh Kh. Daliev, Sultanpasha A. Muzafarova, Kakhramon M. Fayzullaev, Gulnoza A. Muzafarova   +5 more
doaj   +1 more source

Photodetectors on the Basis of Porous Silicon [PDF]

Журнал нано- та електронної фізики, 2012
The paper studies the electrical characteristics of photodiode structures porous silicon – silicon substrates modified with molecules of iodine. Changes the nature of current-voltage characteristics obtained structures with symmetrical for straightening ...
I.B. Olenych, L.S. Monastyrskii, B.S. Sokolovskii   +2 more
doaj  

High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm.
Mykola Kukurudziak, Olga Andreeva, Volodymyr Lipka   +2 more
doaj   +1 more source

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

Advanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon, Je‐Jun Lee, Somin Yun, Sangin Hahn, Chanhyeok Kim, Jinsoo Park, Jung Pyo Hong, Seong‐Jun Han, Jung Woo Kim, Jeong Hwan Lee, Subin Jeon, Youngmin Kim, Gunuk Wang, Hanul Min, Do Kyung Hwang   +14 more
wiley   +1 more source

Characterization methods for silicon photodiode and silicon sub-surface properties [PDF]

, 2004
This thesis considers the characterization of silicon photodiode and the applications of silicon photodiodes in precision metrology, and some aspects of the silicon material characterizations.
Haapalinna, Atte
core   +1 more source

Photoinduced Charge Separation in Single‐Component Squaraine Films: The Key Role of Electrostatic Disorder

Advanced Functional Materials, EarlyView.
ABSTRACT Neat films of organic dyes are an interesting technological platform for solar cells and photodetectors. Recently, the conventional biphasic bulk‐heterojunction paradigm for photoinduced charge separation was challenged by the observation that charge carriers can be photogenerated in single‐component materials. A comprehensive experimental and
Davide Giavazzi, João Pedro Ferreira Assunção, Michael Bauer, Matthias Diethelm, Wei‐Hsu Hu, Mohammad Jafarpour, Roland Widmer, Antonia Neels, Dimitrios Sapalidis, Bruno F. B. Silva, Roland Hany, Frank Nüesch, Anna Painelli   +12 more
wiley   +1 more source

Silicic p–i–n-photodiode with small dark current

Технологія та конструювання в електронній апаратурі, 2011
The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored.
Yu. G. Dobrovolskiy, A. A. Ashcheulov
doaj   +2 more sources