Results 21 to 30 of about 562,978 (284)

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers [PDF]

Технологія та конструювання в електронній апаратурі, 2013
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes.
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova, M. A. Mirdzhalilova, G. O. Asanova, O. A. Abdulkhaev, Zh. F. Mukhutdinov   +6 more
doaj   +1 more source

Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

Inorganics, 2023
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse
Hazem Deeb, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan, Kirill Lozovoy   +4 more
doaj   +1 more source

Heterogeneous photodiodes on silicon nitride waveguides

Optics Express, 2020
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external ...
Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling   +10 more
openaire   +2 more sources

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent, Molina, Romain, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Corbiere, F., Marcelot, Olivier, Magnan, P., Gaillardin, M., Corbière, Franck, Molina, R., Martin-Gonthier, P., Paillet, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Goiffon, V., Marcandella, Claude, Magnan, Pierre, Martin-Gonthier, Philippe   +20 more
core   +1 more source

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]

, 2012
1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien, Goiffon, Vincent, Roy, François, Carrere, Jean-Pierre, Magnan, Pierre, Allegret, Stephane   +5 more
core   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Silicon four element p-i-n photodiode with improved characteristics

Радіоелектронні і комп'ютерні системи, 2023
This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
doaj   +1 more source

Numerical simulation of neutron radiation effects in avalanche photodiodes [PDF]

, 2000
A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a ...
Osborne, M, Watts, SJ, Hobson, PR
core   +1 more source

Theoretical evaluation of MTF and charge collection efficiency in CCD and CMOS image sensor [PDF]

, 2009
Classical models used to calculate the Modulation Transfer function (MTF) of a solid-state image sensor generally use a sinusoidal type of illumination.
Olivier Saint-Pé, Magali Estribeau, Petit, Sophie, Rolland, Guy, Estribeau, Magali, Saint-Pé, Olivier, Sophie Petit, Ibrahima Djité, Guy Rolland, Djité, Ibrahima, Magnan, Pierre, Pierre Magnan   +11 more
core   +1 more source

Methods of Correction of Spectral Characteristics of Silicon Photodetectors

East European Journal of Physics
The paper investigates methods for shifting the spectral characteristics of silicon photodiodes toward longer wavelengths. It is established that with increasing the reverse bias voltage of the photodiode, the maximum spectral characteristic shifts ...
Mykola S. Kukurudziak, Vyacheslav V. Ryukhtin   +1 more
doaj   +1 more source