Results 21 to 30 of about 908,384 (292)
Study of a solar cell with a silicon-based photodiode structure [PDF]
E3S Web of ConferencesThis article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers.
Utamuradova Sharifa +5 more
doaj +1 more source
High-Speed Photodetectors for Microwave Photonics
Applied Sciences, 2019 This paper reviews high-power photodiodes, waveguide photodetectors, and integrated photodiode-antenna emitters with bandwidths up to 150 GHz. Results from heterogeneous III-V photodiodes on silicon and Ge-on-Si photodiode arrays for analog applications ...
Keye Sun, Andreas Beling
doaj +1 more source
Study on the formation of current characteristics of a silicon photodiode with rectifying barriers [PDF]
Технологія та конструювання в електронній апаратурі, 2013 The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes.
A. V. Karimov +6 more
doaj +1 more source
Inorganics, 2023 In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse
Hazem Deeb +4 more
doaj +1 more source
Heterogeneous photodiodes on silicon nitride waveguides
Optics Express, 2020 Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external ...
Qianhuan Yu +10 more
openaire +2 more sources
Silicon four element p-i-n photodiode with improved characteristics
Радіоелектронні і комп'ютерні системи, 2023 This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
doaj +1 more source
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect [PDF]
, 2017 We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection.
A. Di Bartolomeo +7 more
semanticscholar +1 more source
Methods of Correction of Spectral Characteristics of Silicon Photodetectors
East European Journal of PhysicsThe paper investigates methods for shifting the spectral characteristics of silicon photodiodes toward longer wavelengths. It is established that with increasing the reverse bias voltage of the photodiode, the maximum spectral characteristic shifts ...
Mykola S. Kukurudziak +1 more
doaj +1 more source
Measurement of Photo Capacitance in Amorphous Silicon Photodiodes [PDF]
, 2013 This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode.
Gonçalves, Dora +4 more
openaire +2 more sources
Photodetector device for fiber optical telecommunication systems
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with the Schottky barrier, have been analyzed in this work. Considered here are advantages of the analyzed semiconductor photodetectors
N.O. Andreyeva
doaj +1 more source