Results 1 to 10 of about 562,978 (284)
A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor [PDF]
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found.
Yu-Yang Tsai +4 more
doaj +5 more sources
A Study on the Performance of a Silicon Photodiode Sensor for a Particle Dosimeter and Spectrometer [PDF]
A lunar vehicle radiation dosimeter (LVRAD) has been proposed for studying the radiation environment on the lunar surface and evaluating its impact on human health.
Bobae Kim +11 more
doaj +4 more sources
Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm [PDF]
Xiao-Long Liu +2 more
exaly +2 more sources
I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor [PDF]
Antonio di Bartolomeo +2 more
exaly +2 more sources
In this work, a silicon photodiode integrated with a piezoelectric membrane is studied by Kelvin probe force microscopy (KPFM) under modulated illumination.
Zeinab Eftekhari +8 more
doaj +1 more source
The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
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Isolation of Responsive Elements of Planar Multi-Element Photodiodes
In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is
Mykola S. Kukurudziak
doaj +1 more source
To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface ...
Guangtong Guo +10 more
doaj +1 more source
Silicon Near-Infrared Sensor Using Trench Photodiode Array
In this paper, we report a method of increasing the sensitivity of a silicon near-infrared sensor. The sensor is realized by forming multiple trench-type photodiodes in a silicon chip. The trench photodiodes can be formed using conventional semiconductor
Yutaka Arima
doaj +1 more source
Automated Characterization of Single-Photon Avalanche Photodiode
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark ...
Aina Mardhiyah M. Ghazali +3 more
doaj +1 more source

