Study of a solar cell with a silicon-based photodiode structure [PDF]
E3S Web of ConferencesThis article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers.
Utamuradova Sharifa +5 more
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Silicon photodiode-competitive 2D vertical photodetector
npj Flexible ElectronicsEmerging two-dimensional (2D) materials offer significant potential for post-silicon photodetectors but often fall short of matching silicon photodiode performance.
Chengyun Hong +3 more
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Simulation of neutron radiation effects in silicon avalanche photodiodes [PDF]
, 2000 This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.A new one-dimensional device simulation package developed for the simulation of neutron radiatiol!
Osborne, M.D., Osborne, Mark David
core +7 more sources
Bootstrapping techniques to improve the bandwidth of transimpedance amplifiers. [PDF]
, 1998 Transimpedance amplifiers using voltage feedback operational amplifiers are widely used for current to voltage conversion in applications when a moderate/high bandwidth and a high sensitivity are required, such as photodiodes, photomultipliers, electron ...
Hoyle, C., Peyton, A. J.
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Scalable MoS<sub>2</sub>/Si Photodiode Arrays From Roll-to-Roll Mechanical Exfoliation. [PDF]
Adv Sci (Weinh)A dry roll‐to‐roll route transforms mechanically exfoliated MoS2 flake networks into silicon‐integrated photodiode arrays. The MoS2/Si junctions generate photovoltaic output without applied bias, allowing illuminated pixels to locate light spots and reconstruct simple images.
Sozen Y, Pucher T, Castellanos-Gomez A.
europepmc +2 more sources
Development of CMOS active pixel sensors [PDF]
, 2008 This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for ...
Greig, Thomas Alexander
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Systematic Phosphorus-Driven Structural and Field Engineering of n-a-Si:H for Flexible n-a-Si:H/Te Near-Infrared Photodetectors. [PDF]
Adv Sci (Weinh)Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Hyun KJ +7 more
europepmc +2 more sources
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon +11 more
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Silicon p-i-n photodiode with increased pulse sensitivity
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
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High-Speed Photodetectors for Microwave Photonics
Applied Sciences, 2019 This paper reviews high-power photodiodes, waveguide photodetectors, and integrated photodiode-antenna emitters with bandwidths up to 150 GHz. Results from heterogeneous III-V photodiodes on silicon and Ge-on-Si photodiode arrays for analog applications ...
Keye Sun, Andreas Beling
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