Results 11 to 20 of about 908,384 (292)

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

Advancement of science, 2022
Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years.
Yibo Zhang, J. Loh, N. Kherani
semanticscholar   +1 more source

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

Beilstein Journal of Nanotechnology, 2023
In this work, a silicon photodiode integrated with a piezoelectric membrane is studied by Kelvin probe force microscopy (KPFM) under modulated illumination.
Zeinab Eftekhari, Nasim Rezaei, Hidde Stokkel, Jian-Yao Zheng, Andrea Cerreta, Ilka Hermes, Minh Nguyen, Guus Rijnders, Rebecca Saive   +8 more
doaj   +1 more source

Model and algorithm of creation of silicon photodiod with high sensitivity in the middle infrared area of the spectrum

Радіоелектронні і комп'ютерні системи, 2022
The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
doaj   +1 more source

Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode [PDF]

npj 2D Materials and Applications, 2018
Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge ...
Tiantian Li, Dun Mao, Nicholas Petrone, R. Grassi, Hao Hu, Yunhong Ding, Zhihong Huang, G. Lo, J. Hone, T. Low, C. Wong, Tingyi Gu   +11 more
semanticscholar   +1 more source

Isolation of Responsive Elements of Planar Multi-Element Photodiodes

East European Journal of Physics, 2023
In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is
Mykola S. Kukurudziak
doaj   +1 more source

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity

Photonics, 2023
To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface ...
Guangtong Guo, Weishuai Chen, Kaifeng Zheng, Jinguang Lv, Yuxin Qin, Baixuan Zhao, Yingze Zhao, Yupeng Chen, Dan Gao, Jingqiu Liang, Weibiao Wang   +10 more
doaj   +1 more source

Highly responsive tellurium-hyperdoped black silicon photodiode with single-crystalline and uniform surface microstructure.

Optics Express, 2020
Femtosecond laser hyperdoped silicon, also known as the black silicon (BS), has a large number of defects and damages, which results in unstable and undesirable optical and electronic properties in photonics platform and optoelectronic integrated ...
Zixi Jia, Qiang Wu, Xiaorong Jin, Song Huang, Jinze Li, Ming Yang, Hui Huang, Jianghong Yao, Jingjun Xu   +8 more
semanticscholar   +1 more source

Silicon Near-Infrared Sensor Using Trench Photodiode Array

IEEE Access, 2021
In this paper, we report a method of increasing the sensitivity of a silicon near-infrared sensor. The sensor is realized by forming multiple trench-type photodiodes in a silicon chip. The trench photodiodes can be formed using conventional semiconductor
Yutaka Arima
doaj   +1 more source

Automated Characterization of Single-Photon Avalanche Photodiode

International Islamic University Malaysia Engineering Journal, 2012
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark ...
Aina Mardhiyah M. Ghazali, Audun Nystad Bugge, Sebastien Sauge, Vadim Makarov   +3 more
doaj   +1 more source

Silicon p-i-n photodiode with increased pulse sensitivity

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021
P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
doaj   +1 more source