Results 271 to 280 of about 54,444 (308)

Silicon wafer integrated enzyme reactors

Biosensors and Bioelectronics, 1994
Abstract Enzyme reactors were fabricated on silicon wafers using microstructuring technologies. The reactors were made of several parallel vertically-cut flow channels. The reactor structure occupied a wafer area of 3 ∗ 15 mm. Reactors with two different channel densities were fabricated: 10 channels/ mm, 165 μm deep; and 25 channels/mm, 235 μm ...
Thomas Laurell, Johan Drott, Lars Rosengren   +2 more
openaire   +1 more source

Monolithic silicon waveguides in bulk silicon wafers

SPIE Proceedings, 2014
We demonstrate two silicon photonic technologies for fabrication of monolithic photonic devices in standard silicon. Using these technologies, we demonstrate low-loss silicon waveguides (2.34 dB/cm), double-layer 3D waveguides, and waveguide Bragg reflectors in standard silicon for optical interconnects and sensing applications.
Chia-Ming Chang, Olav Solgaard
openaire   +1 more source

Silicon cylinder grown on the surface of a silicon wafer

Journal of Crystal Growth, 1997
Abstract Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter.
Yafei Zhang, Gongchuan Li, C.S. Lee, Shui-Tong Lee   +3 more
openaire   +1 more source

Epitaxial silicon carbide on a 6″ silicon wafer

Technical Physics Letters, 2014
The results of the growth of silicon-carbide films on silicon wafers with a large diameter of 150 mm (6″) by using a new method of solid-phase epitaxy are presented. A SiC film growing on Si wafers was studied by means of spectral ellipsometry, SEM, X-ray diffraction, and Raman scattering.
S. A. Kukushkin, A. V. Lukyanov, A. V. Osipov, N. A. Feoktistov   +3 more
openaire   +1 more source

Optimization of Silicon-Silicon Adhesive Wafer Bonding

ECS Transactions, 2010
Optimization of bonding parameters to develop a low temperature adhesive wafer bonding process for silicon was studied. SU-8 was used as the adhesive. The Key Process Input Variables were soft bake temperature, UV exposure and bonding temperature. The soft bake temperatures were 70 oC, 90 oC and 95 oC. UV exposure energies were 50 mJ/cm2, 100 mJ/cm2
Susan L. Holl, Srinivasulu Korrapati, C. Colinge   +2 more
openaire   +1 more source

Silicon Wafer Processing

2023
Deren Yang, Xingbo Liang, Xuegong Yu
openaire   +1 more source

Silicon Wafer Production

2023
openaire   +1 more source

Bendable Silicon Wafer

New Electronics, 2018
openaire   +1 more source

Image-processing-based model for the characterization of surface roughness and subsurface damage of silicon wafer in diamond wire sawing

Precision Engineering, 2022
Shenxin Yin, Huapan Xiao, Heng Wu
exaly  

Silicon Wafers

2010
openaire   +1 more source