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Microsyst NanoengLin Z, Zheng Y, Chen Y, Wang C, Yuan Z.
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Investigating Floating-Gate Topology Influence on van der Waals Memory Performance. [PDF]
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Two-dimensional Graphene/MoS2 vertical heterostructure for detection of hemoglobin concentration in blood samples. [PDF]
PLoS OneKumar M +7 more
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Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]
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Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate. [PDF]
Materials (Basel)Kim B, Park SH.
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A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics. [PDF]
Sci RepXu F +9 more
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Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. [PDF]
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Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Micromachines (Basel)Li Y, Huang Y, Li J, Sun H, Guo Z.
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Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications. [PDF]
Sci RepPrasanna RL +3 more
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Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
ACS OmegaDudekula S +5 more
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