Results 151 to 160 of about 10,669 (173)
Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Micromachines (Basel)Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc +1 more source
Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
ACS OmegaDudekula S +5 more
europepmc +1 more source
Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]
Nanomaterials (Basel)Wang H +9 more
europepmc +1 more source
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD
Journal of Physics: Conference Series, 2020 International audienceAbstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented.
Ahmed Shaker
exaly +2 more sources
Unlocking the Sun's potential: solar cell design empowered through BSF+ layer using Silvaco TCAD
Solar cell technology plays a crucial role in the sustainable energy landscape, offering a promising avenue for renewable energy generation. In this study, we have presented a physical device simulation of a solar cell using Silvaco TCAD.
Muhammad Qasim Mehmood +2 more
exaly +2 more sources
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Study on the effect of 65 nm NMOS transistor using SILVACO TCAD
Materials Today: Proceedings, 2023exaly
A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD
2021Ahmed Shaker +2 more
exaly
Design and Simulation of Nano Scale FIN FET Using Silvaco TCAD
2021Alexey Nazarov, Pramod Narayan Tripathi
exaly