Results 151 to 160 of about 2,176 (209)

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]

Micromachines (Basel)
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc   +1 more source

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors. [PDF]

Sci Rep
Kim D, Lee D, Kim W, Lee HJ, Kim C, Lee KH, Jung M, Yang JE, Jang Y, Kim S, Kim S, Kim DH.   +11 more
europepmc   +1 more source

Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors. [PDF]

Gels
Li M, Liang X, Liu C, Han S.
europepmc   +1 more source

Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT). [PDF]

PLoS One
Prasanthi L, Panigrahy AK, Tata S, B RBJ, Rao TS, Prakash MD, Kundu SK.   +6 more
europepmc   +1 more source

Low breakdown field and high ionization index in ReSe₂ avalanche field-effect transistors. [PDF]

Nat Commun
Zhang J, Wang J, Liu D, Andreev M, Peng Z, Wei J, Bozcali AE, Jain S, Zheng H, Avsar A, Zhang M, Chan M, Ang KW.   +12 more
europepmc   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel)
Wang H, Liu Y, Dong X, Ullah A, Sun J, Zhang C, Xiong Y, Gu P, Chen G, Liu X.   +9 more
europepmc   +1 more source

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]

Micromachines (Basel)
Niu X, Sang L, Duan X, Gu S, Zhao P, Zhu T, Xu K, He Y, Li Z, Zhang J, Jin R.   +10 more
europepmc   +1 more source

Digital coding metamaterials with multi-modulation schemes and beam steering for intra-chip millimeter-wave connectivity. [PDF]

Sci Rep
Shen Z, Taravati S, Yan J.
europepmc   +1 more source

Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. [PDF]

Micromachines (Basel)
Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L, Ma X.   +10 more
europepmc   +1 more source