Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors. [PDF]
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Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors. [PDF]
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Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT). [PDF]
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Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]
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Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]
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Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors. [PDF]
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SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]
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A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics. [PDF]
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A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD
2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES), 2021The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational ...
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