Results 171 to 180 of about 2,176 (209)
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Study on the effect of 65 nm NMOS transistor using SILVACO TCAD
Materials Today: Proceedings, 2023Azira Ahmad Tarmizi +5 more
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Organic light emitting diode simulation using Silvaco TCAD tools
2016 International Siberian Conference on Control and Communications (SIBCON), 2016Currently organic light emitting diodes (OLEDs) have become much popular in many spheres of microelectronics including optoelectronic applications, modulated light sources, internet connection etc. The research paper represents the results of two polymer layer organic light emitting diode (OLED) 1D and 2D-numerical simulation and analysis using Silvaco
I. A. Lysenko +2 more
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SILVACO TCAD Implementation of Dual Junction Quantum Well Solar Cell
2020{"references": ["K.W. J Barnham and G. Duggan (1990), \"A new approach to high-efficiency multi-band-gap solar cells\", J. Appl. Phys., Volume 67, Issue 7, ISSN: 0021-8979, Available at: https://doi.org/10.1063/1.345339.", "J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts and C.
Islam, Muhammad Johirul +2 more
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Performance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD Tools
Solid State Phenomena, 2023Metal oxide semiconductor (MOS) capacitor is a trilayer device that comprises of metal, dielectric, and semiconductor layer. The advancement of MOS technology has greatly give huge improvement to MOS devices which lead to scaling down the MOS devices.
Lyly Nyl Ismail +2 more
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Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
Key Engineering Materials, 2023Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of heterostructure composition and SiGe channel thickness on the electrical characteristics of p-MOSFET are ...
Siti NorFarah Nadia Mohd Salleh +5 more
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Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell
2022In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher wavelengths can be absorbed to photo-generate more carriers resulting in the increase of the conversion ...
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Simulation of a Silicon Based Solar Cell Using TCAD-Silvaco Tools
2020The most well-known solar cells are made of semiconductors, mainly based on crystalline silicon (mono- or poly-crystalline). It consists in converting solar radiation into electricity. Generally, the solar cell device that can carry out this function is essentially a single PN junction with large surface. The most of solar cells on the market today are
A. Ghazli, A. Aissat, J. P. Vilcot
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Silicon, 2022
In this paper, a numerical model is designed to evaluate the performances of a two-terminal tandem Perovskite-CIGS solar cell. Tandem perovskite solar cells (TPSCs) are a type of device that has attracted great attention for their scalability, low cost, and high efficiency.
Boukortt N. E. I. +5 more
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In this paper, a numerical model is designed to evaluate the performances of a two-terminal tandem Perovskite-CIGS solar cell. Tandem perovskite solar cells (TPSCs) are a type of device that has attracted great attention for their scalability, low cost, and high efficiency.
Boukortt N. E. I. +5 more
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Unlocking the Sun's potential: solar cell design empowered through BSF+ layer using Silvaco TCAD
Photonics for Solar Energy Systems XIqrar Hussain Syed +5 more
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European Journal of Electrical Engineering, 2022
Today's electronics scenario finds itself with the advancement in the field of foremost important component MOSFET. Though one-step ahead of MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices in power handling capability. In this paper, the results of simulation of VDMOS transistor have been presented.
Mourad Bella, Mehdi Ghoumazi
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Today's electronics scenario finds itself with the advancement in the field of foremost important component MOSFET. Though one-step ahead of MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices in power handling capability. In this paper, the results of simulation of VDMOS transistor have been presented.
Mourad Bella, Mehdi Ghoumazi
openaire +1 more source