Results 171 to 180 of about 1,120 (211)

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]

open access: yesNanomaterials (Basel)
Wang H   +9 more
europepmc   +1 more source

Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors. [PDF]

open access: yesNat Commun
Zhang J   +12 more
europepmc   +1 more source

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]

open access: yesMicromachines (Basel)
Niu X   +10 more
europepmc   +1 more source

A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics. [PDF]

open access: yesNat Commun
Gong H   +14 more
europepmc   +1 more source
Some of the next articles are maybe not open access.

Related searches:

A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD

2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES), 2021
The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational ...
Marwa Sayed Salem   +4 more
openaire   +3 more sources

Organic light emitting diode simulation using Silvaco TCAD tools

2016 International Siberian Conference on Control and Communications (SIBCON), 2016
Currently organic light emitting diodes (OLEDs) have become much popular in many spheres of microelectronics including optoelectronic applications, modulated light sources, internet connection etc. The research paper represents the results of two polymer layer organic light emitting diode (OLED) 1D and 2D-numerical simulation and analysis using Silvaco
I. A. Lysenko   +2 more
openaire   +3 more sources

Home - About - Disclaimer - Privacy