Results 191 to 200 of about 1,120 (211)
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Performance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD Tools
Solid State Phenomena, 2023Metal oxide semiconductor (MOS) capacitor is a trilayer device that comprises of metal, dielectric, and semiconductor layer. The advancement of MOS technology has greatly give huge improvement to MOS devices which lead to scaling down the MOS devices.
Lyly Nyl Ismail +2 more
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Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
Key Engineering Materials, 2023Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with current Si manufacturing technologies. In this work, the impact of heterostructure composition and SiGe channel thickness on the electrical characteristics of p-MOSFET are ...
Siti NorFarah Nadia Mohd Salleh +5 more
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Conference on Spectral Technology and Applications (CSTA 2024)
wenjin wang +14 more
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wenjin wang +14 more
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Investigation and optimization of ultrathin Cu(In,Ga)Se2 solar cells by using silvaco-TCAD tools
Journal of Materials Science: Materials in Electronics, 2021This paper presents an investigation of ultrathin Cu (In1−xGax) Se2 solar cell which was calibrated from the fabricated cell using Silvaco-TCAD tools. Carrier transport mechanism and conduction band alignment at the CdS/CIGS interface shows a large influence on PV parameters.
Nour El I. Boukortt +3 more
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Modelling and Simulation of Photovoltaic Solar Cell using Silvaco TCAD and Matlab Software
2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018In this paper, a modelling approach for a photovoltaic solar cell has been proposed which begins with the development of a solar cell up to enabling the solar cell to be implemented at circuit level simulations. This modelling approach is useful in the photovoltaic field to have an initial or overall observation on the effects toward the photovoltaic ...
Azri Husni Hasani +5 more
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Mesh Grid of SILVACO TCAD Effect on Net Doping Profile for NMOS Structures
AIP Conference Proceedings, 2009Process of developing the NMOS structure is performed in 2D SILVACO Athena and Atlas Simulation. The NMOS fabrication process steps were chosen from reference [4]. Mesh grid effect on net doping profile was obtained by varying the grid. Variation of grid was determined through observation between fine mesh and loosen mesh in y‐axis.
M. Redzuan +9 more
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AIP Conference Proceedings, 2020
Moore's Law state that, the number of transistors in silicon chip will be doubled every 2 years. The size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) will be scaled down. MOSFET is a semiconductor device that used for switching and amplifying.
Mohd Shahrul Ashraf Bustam +5 more
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Moore's Law state that, the number of transistors in silicon chip will be doubled every 2 years. The size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) will be scaled down. MOSFET is a semiconductor device that used for switching and amplifying.
Mohd Shahrul Ashraf Bustam +5 more
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Performance Study of the Micromorph Silicon Tandem Solar Cell Using Silvaco TCAD Simulator
Transactions on Electrical and Electronic Materials, 2019This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation software Silvaco TCAD. Both the initial (un-degraded or annealed) state, and the light induced degradation
A. F. Bouhdjar +5 more
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Simulation of Optimum Stored Charge in SONOS FLASH Memory using Silvaco TCAD
2022 6th International Conference on Devices, Circuits and Systems (ICDCS), 2022Samdar Singh +3 more
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