Results 181 to 190 of about 2,176 (209)

Valence band barrier optimization in HgCdTe p-on-n double layer heterostructure: a Silvaco TCAD simulation

Conference on Spectral Technology and Applications (CSTA 2024)
wenjin wang, Jincheng KONG, Yang ZHANG, Wenbin QI, Jin YANG, Linwei SONG, Gang Qin, Jun WU, Dafan ZUO, Chaowei YANG, Xiongjun LI, Wenbin DENG, Sheng MU, Zhiyuan WAN, Jun ZHAO   +14 more
openaire   +3 more sources

Effect of absorbing layer thickness on efficiency solar cells multijunctions vertical based CIGS Using SILVACO TCAD

STUDIES IN ENGINEERING AND EXACT SCIENCES, 2023
In this study, we performed numerical simulations using SILVACO-TICAD considering microelectronic and photonic structures to determine the feasibility and design the device structure to optimize the performance of a vertical multijunctions thin films solar cell based CIGS under air mass 1.5 global (AM1.5G) spectrums.
Bounegta Mustapha, Dennai Benmoussa, Boukais Meriem   +2 more
openaire   +1 more source

Modelling and Simulation of Photovoltaic Solar Cell using Silvaco TCAD and Matlab Software

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
In this paper, a modelling approach for a photovoltaic solar cell has been proposed which begins with the development of a solar cell up to enabling the solar cell to be implemented at circuit level simulations. This modelling approach is useful in the photovoltaic field to have an initial or overall observation on the effects toward the photovoltaic ...
Azri Husni Hasani, Siti Fazlili Abdullah, Ahmad Wafi Mahmood Zuhdi, Mohd. Shanaruddin Bahrudin, Fazliyana Za'abar, M. Najib Harif   +5 more
openaire   +1 more source

Performance Study of the Micromorph Silicon Tandem Solar Cell Using Silvaco TCAD Simulator

Transactions on Electrical and Electronic Materials, 2019
This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation software Silvaco TCAD. Both the initial (un-degraded or annealed) state, and the light induced degradation
A. F. Bouhdjar, M. Adaika, Am. Meftah, R. Boumaraf, Af. Meftah, N. Sengouga   +5 more
openaire   +1 more source

Mesh Grid of SILVACO TCAD Effect on Net Doping Profile for NMOS Structures

AIP Conference Proceedings, 2009
Process of developing the NMOS structure is performed in 2D SILVACO Athena and Atlas Simulation. The NMOS fabrication process steps were chosen from reference [4]. Mesh grid effect on net doping profile was obtained by varying the grid. Variation of grid was determined through observation between fine mesh and loosen mesh in y‐axis.
M. Redzuan, B. Ayub, M. Shahrir, O. Suziana, M. Yunus, M. H. Abdullah, U. M. Noor, M. Rusop, Mohamad Rusop, Tetsuo Soga   +9 more
openaire   +1 more source

Silvaco TCAD Implementation of All-InGaN Based Quantum Well Solar Cell

In this work an all-InGaN-based p-i-n structured quantum well solar cell (QWSC) has been implemented in Silvaco TACD environment. Use of same material for different layers reduces the lattice mismatch for which recombination loss is reduced and also, insertion of low-bandgap quantum wells (QWs) enhances the absorption of long-wavelength light for which
Syeda Nura Nabiah, Muhammad Johirul Islam, Md. Iqbal Bahar Chowdhury   +2 more
openaire   +1 more source

Modeling and simulation of microscopic defects in CIS-based solar cell thin film using silvaco TCAD

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, 2013
Reactively sputtered copper indium sulfide (CIS) chalcopyrite semiconductor has been actively studied as the potential absorber layer for solar cell thin film application. Using sputtering technique however could result in the formation of several types of defects for example microscopic defects. Microscopic defects are formed within the absorber layer
Raudah Abu Bakar, Sukreen Hana Herman, Harnani Hassan, Wan Rosmaria Wan Ahmad, Fakardellawarni Mohamad, Mohammad Muhaimin Aminuddin   +5 more
openaire   +1 more source

Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD

2017
This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight. 
openaire   +1 more source

Προσομοίωση JFET καρβιδίου πυριτίου με το TCAD εργαλείο της SILVACO

2013
In this thesis the simulation with TCAD, the basic function of SILVACO ATLAS and the difficulties that somebody encounters in power device simulations.
openaire   +1 more source

III-V MOSFET Structure (InP/InAs/InGaAs) I-V Characteristics Using Silvaco TCAD Simulator

2018
Our work is used to investigate the electrical proprieties of III-V MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from an InP/InAs/InGaAs structure. This simulation is done using Silvaco TCAD tools. We solve the coupled Poisson-Schrodinger equation that gives the carriers concentration and their eigen state energies at each level.
S. Ammi, A. Aissat, N. Wichmann, S. Bollaert   +3 more
openaire   +1 more source