Results 11 to 20 of about 83,574 (291)

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors [PDF]

open access: yesNature Communications
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li   +9 more
doaj   +2 more sources

Single-Electron Transistors [PDF]

open access: yesPhysics World, 2020
Abstract : A Single Electron Transistor (SET) turns on and off for an electron added to it. Our goal is to better control and understands the physics of SETs in order to make them technologically useful. Our work has shown that the SET behaves like an artificial atom, in that the number of electrons and the energy are both quantized.
Michel H Devoret, Christian Glattli
  +4 more sources

Single-Electron Transport and Detection of Graphene Quantum Dots

open access: yesNanomaterials, 2023
The integrated structure of graphene single-electron transistor and nanostrip electrometer was prepared using the semiconductor fabrication process. Through the electrical performance test of the large sample number, qualified devices were selected from ...
Xinxing Li, Jinggao Sui, Jingyue Fang
doaj   +1 more source

Reconfigurable Boolean logic using magnetic single-electron transistors. [PDF]

open access: yesPLoS ONE, 2015
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate.
M Fernando Gonzalez-Zalba   +8 more
doaj   +1 more source

Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization

open access: yesApplied Sciences, 2022
Based on the time-dependent master equation and taking the dynamic gate current into account, a new single-electron transistor (SET) model is proposed, which can represent intrinsic terminal capacitances and transcapacitances.
Alka Singh   +3 more
doaj   +1 more source

Quantum transport in a single molecular transistor at finite temperature

open access: yesScientific Reports, 2021
We study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under
Manasa Kalla   +2 more
doaj   +1 more source

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

open access: yesElectronics Letters, 2021
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios   +7 more
doaj   +1 more source

Bottom‐Up Single‐Electron Transistors

open access: yesAdvanced Materials, 2017
AbstractAs the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is ...
Makarenko, Ksenia S.   +5 more
openaire   +3 more sources

Single PbS colloidal quantum dot transistors

open access: yesNature Communications, 2023
Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures.
Kenji Shibata   +5 more
doaj   +1 more source

Single charge transport in a fully superconducting SQUISET locally tuned by self-inductance effects

open access: yesAIP Advances, 2022
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate sensitivity to ...
E. Enrico   +3 more
doaj   +1 more source

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