Results 71 to 80 of about 83,574 (291)

Giant current fluctuations in an overheated single electron transistor

open access: yes, 2010
Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and
A. Altland   +6 more
core   +2 more sources

A Programmable Semiconductor Containing Active Molecular Photoswitches Located in the Crystal's Volume Phase

open access: yesAdvanced Functional Materials, EarlyView.
A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske   +4 more
wiley   +1 more source

Anomalous zero-temperature magnetopolaronic blockade of resonant electron tunneling in Majorana-resonant-level single-electron transistor

open access: yesCondensed Matter Physics, 2018
The magnetopolaronic generalization of a Majorana-resonant-level (MRL) model is considered for a single-level vibrating quantum dot coupled to two half-infinite g=1/2 Tomonaga-Luttinger liquid (TLL) leads.
G.A. Skorobagatko
doaj   +1 more source

Metallic single-electron transistor without traditional tunnel barriers

open access: yes, 2000
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes.
A. B. Zorin   +5 more
core   +1 more source

Heat Transistor: Demonstration of Gate-Controlled Electron Refrigeration [PDF]

open access: yes, 2007
We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal island can be ...
Alexander M. Savin   +6 more
core   +2 more sources

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

open access: yesAdvanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo   +10 more
wiley   +1 more source

Current and noise expressions for radio-frequency single-electron transistors

open access: yes, 2005
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations ...
D. Ahn   +14 more
core   +1 more source

Noncollinear single-electron spin-valve transistors

open access: yesPhysical Review B, 2005
4 pages, 3 ...
Wetzels, W. (author)   +2 more
openaire   +4 more sources

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

open access: yesAdvanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante   +17 more
wiley   +1 more source

An ab Initio Calculations of Single-Electron Transistor Based Single Walled Carbon Nanotube of Ultra-Small Diameter

open access: yesEast European Journal of Physics, 2020
In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations.
Sraja Chauhan, Ajay Singh Verma
doaj   +1 more source

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