Results 111 to 120 of about 3,365 (173)

Monolithic integration of SiC diode detectors into scanning X-ray microscopy optical elements for in situ beam diagnostics. [PDF]

J Synchrotron Radiat
Trovato G, Finizio S, Moscato S, Raabe J, Reuteler J, Camarda M.   +5 more
europepmc   +1 more source

Modeling the Variance of Passive SiPMs in the Nonlinear Regime. [PDF]

Sensors (Basel)
Moya V, Rosado J.
europepmc   +1 more source

Single-Photon Detectors for Satellite and CubeSat Quantum Key Distribution: A Systematic Evidence Map. [PDF]

Entropy (Basel)
Tsochev G, Gieva E, Nenova M.
europepmc   +1 more source

A Universal Deep Learning Model for Predicting Detection Performance and Single-Event Effects of SPAD Devices. [PDF]

Micromachines (Basel)
Chen Y, Huang J, Zeng Y, Jiang Y, Wang S, Chen S, Liu H.   +6 more
europepmc   +1 more source

Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs. [PDF]

Sensors (Basel)
Losev A, Filyaev A, Zavodilenko V, Knyazhev F, Pavlov I, Gorbatsevich A.   +5 more
europepmc   +1 more source

Comprehensive Comparison of Front- and Back-Illuminated Single-Photon Avalanche Diodes in 110 nm Standard CMOS Image Sensor Technology. [PDF]

Sensors (Basel)
Eom D, Ha WY, Park E, Chun JH, Choi J, Choi WY, Lee MJ.   +6 more
europepmc   +1 more source

High-Performance SiPM Detection Module for Ultra-Fast Time-Resolved Measurements. [PDF]

Sensors (Basel)
Fratta G, Daniele P, Labanca I, Penna M, Acconcia G, Gola A, Rech I.   +6 more
europepmc   +1 more source

Femtosecond Laser Two-Photon Absorption for Simulating Single-Event Effects and Defining the Safe Operating Area of SiC Power MOSFETs. [PDF]

Micromachines (Basel)
Zhang C, Yin H, Shi L, Wen X, Ma Z, Jia H.   +5 more
europepmc   +1 more source

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Electronics for single photon avalanche diode arrays

Sensors and Actuators A: Physical, 2007
This is the second of two serial papers dealing with single photon avalanche diode (SPAD) topics. Aim of the series is to discuss in depth the features and device structures of the array chip we developed (in the first paper) and the required fast electronics and the overall performance reached in passive, active, and gated regime (in this second paper)
Alberto Tosi, Franco Zappa, Sérgio Cova
exaly   +3 more sources