Results 81 to 90 of about 205,983 (305)
Effect of the Si/SiO2 Interface on Diffusion in SiO2
Using 30Si-implanted 28SiO2 and natSiO2/28SiO2 structures, Si self-diffusion in SiO2 was studied as a function of temperature and SiO2 thickness (200−650 nm). Si self-diffusivity increased by about one order of magnitude with decreasing SiO2 thickness from 650 to 200 nm with a SiN layer, i.e., the shorter the distance between the 30Si diffusers and the
FUKATSU, Shigeto +6 more
openaire +2 more sources
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Mehdi Abedi,1 Samira Sadat Abolmaali,1,2 Mozhgan Abedanzadeh,1 Fatemeh Farjadian,2 Soliman Mohammadi Samani,2,3 Ali Mohammad Tamaddon1,2 1Department of Pharmaceutical Nanotechnology, School of Pharmacy, Shiraz University of Medical Sciences, Shiraz, Fars,
Abedi M +5 more
doaj
Cathodoluminescence Properties of SiO2: Ce3+,Tb3+, SiO2:Ce3+, Pr3+ and SiO2: PbS
Silicon dioxide (SiO2), also known as silica, is an oxide of silicon (Si) that is found in nature in two different forms, namely amorphous and crystalline. Traditionally, amorphous SiO2 is used in many applications such as semiconductor circuits, microelectronics and optical fibers for telecommunication.
Odireleng M. +5 more
openaire +2 more sources
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Cell patterning on photolithographically defined parylene-C:SiO2 substrates
Cell patterning platforms support broad research goals, such as construction of predefined in vitro neuronal networks and the exploration of certain central aspects of cellular physiology.
Shipston, Mike J +9 more
core +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
UV coatings using Ta2O5-SiO2 quantized nanolaminates
The use of Quantized Nanolaminates (QNL) in optical interference coatings has gained significant attention in recent years. By using a magnetron sputtering tool from Evatec with rotating substrate table and multiple sputtering sources operating ...
Bärtschi Manuel +6 more
doaj +1 more source
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon +4 more
wiley +1 more source

