Results 91 to 100 of about 41,920 (290)

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Unified theory of magnetization dynamics with relativistic and nonrelativistic spin torques

, 2018
Spin torques play a crucial role in operative properties of modern spintronic devices. To study current-driven magnetization dynamics, spin-torque terms providing the action of spin-polarized currents have previously often been added in a ...
Berritta, Marco, Mondal, Ritwik, Oppeneer, Peter M.   +2 more
core   +1 more source

Resolving the Structural Duality of Graphene Grain Boundaries

Advanced Materials, EarlyView.
Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo, Emiliano Ventura‐Macías, Mariano D. Jiménez‐Sánchez, Nicoleta Nicoara, Pierre Mallet, Jean‐Yves Veuillen, Vincent T. Renard, Antonio J. Martínez‐Galera, Pablo Pou, Julio Gómez‐Herrero, Rubén Pérez, Iván Brihuega   +11 more
wiley   +1 more source

Inequal Three Qubit Entanglement Using GHZ State Generation for Spin-Torque Based Qubit Architecture

IEEE Open Journal of Nanotechnology
This article presents the generation of Greenberger–Horne–Zeilinger (GHZ) states using a spin-torque-based qubit architecture, introducing a hardware-native decomposition of the Hadamard and controlled NOT (CNOT) gates.
Anant Aravind Kulkarni, Shivam Verma
doaj   +1 more source

High write endurance up to 1012 cycles in a spin current-type magnetic memory array

AIP Advances, 2019
We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array.
Yohei Shiokawa, Eiji Komura, Yugo Ishitani, Atsushi Tsumita, Keita Suda, Yuji Kakinuma, Tomoyuki Sasaki   +6 more
doaj   +1 more source

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

, 2005
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that
Buhrman, R. A., Fuchs, G. D., Katine, J. A., Kiselev, S. I., Mauri, D., Ralph, D. C., Wooley, K. S.   +6 more
core   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

A physical unclonable function based on variations of write times in STT-MRAM due to manufacturing defects [PDF]

AIP Advances
A physical unclonable function (PUF) utilizes the unclonable random variations in a device’s responses to a set of inputs to produce a unique “biometric” for authentication.
Jacob Huber, Supriyo Bandyopadhyay
doaj   +1 more source

Atomistic Mechanisms Triggered by Joule Heating Effects in Metallic Cu‐Bi Nanowires for Spintronics

Advanced Materials, EarlyView.
Bi doped metallic Cu nanowires are promising for spintronics thanks to the stabilization of a giant spin Hall effect. However, heat resulting from current injection forces Bi to leave solution, forcing segregation into monoatomic decorations which evolve into coherent crystalline aggregates.
Alejandra Guedeja‐Marrón, Juan Ignacio Beltrán, Matilde Saura‐Múzquiz, Paolo Perna, M. Carmen Muñoz, Lucas Pérez, Maria Varela   +6 more
wiley   +1 more source

Spin-torque switching of a nano-magnet using giant spin hall effect

AIP Advances, 2015
The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic ...
Ashish V. Penumatcha, Suprem R. Das, Zhihong Chen, Joerg Appenzeller   +3 more
doaj   +1 more source