Results 1 to 10 of about 85,154 (304)

Machine learning for the development of new materials for a magnetic tunnel junction [PDF]

npj Spintronics
In materials science, we have been increasing the number of constituent elements in an alloy and compounds to improve their properties. For example, in magnetism and spintronics, ternary alloys, such as NdFeB and CoFeB have been developed and widely used
Atsufumi Hirohata, Hiroki Koizumi, Tufan Roy, Masahito Tsujikawa, Shigemi Mizukami, Kenji Nawa, Masafumi Shirai   +6 more
doaj   +2 more sources

Interface-to-Surface Transition Induced Topological Hall Effect in 2-Dimensional SrRuO3 Integrated on Silicon [PDF]

Research
The topological Hall effect (THE), a transport signature emerging from chiral spin textures induced by structural symmetry breaking and the Dzyaloshinskii–Moriya interaction (DMI), represents a rich frontier in condensed matter physics with promising ...
Qinglong Wang, Bin He, Jinrui Guo, Jianping Zhang, Yue Han, Huan Liu, Weidong Wang, Shengshi Li, Weiming Lü, Shishen Yan   +9 more
doaj   +2 more sources

Perspectives for spintronics in 2D materials

APL Materials, 2016
The past decade has been especially creative for spintronics since the (re)discovery of various two dimensional (2D) materials. Due to the unusual physical characteristics, 2D materials have provided new platforms to probe the spin interaction with other
Wei Han
doaj   +3 more sources

Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron

AIP Advances, 2022
A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized “0” and “1” with a controllable functionality of time-averaged value.
Taeyueb Kim, HeeGyum Park, Ki-Hyuk Han, Young-Jun Nah, Hyun Cheol Koo, Byoung-Chul Min, Seokmin Hong, OukJae Lee   +7 more
doaj   +1 more source

Femtosecond control of electric currents at the interfaces of metallic ferromagnetic heterostructures [PDF]

, 2015
The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed.
A Brataas, A Chernyshov, A Drezet, A Manchon, A Melnikov, A. V. Kimel, AP Pyatakov, AV Kimel, B Dupé, B Koopmans, BA Bernevig, C Ciccarelli, CD Stanciu, CH Lambert, D Rudolf, E. Paz, F Freimuth, F. Freimuth, G Malinowski, G-M Choi, H Kurebayashi, HA Wierenga, IM Miron, J Kim, J-C Rojas-Sánchez, J. D. Costa, J. Ventura, JM Schleicher, K Garello, L Liu, N Romming, O Mosendz, P Biagioni, P Němec, P. P. Freitas, PS Pershan, R. V. Mikhaylovskiy, RV Mikhaylovskiy, S Mangin, S. Blügel, SD Ganichev, T Kampfrath, T. J. Huisman, Th. Rasing, TJ Huisman, W Weber, Y. Mokrousov, YA Bychkov   +47 more
core   +7 more sources

Large Magnetoresistance in Magnetic Tunnel Junction Based on Ni-Adsorbed CrI3 with Half-Metallicity

Advanced Devices & Instrumentation, 2023
Two-dimensional (2D) materials, especially the materials that have intrinsic ferromagnetism (FM), have attracted considerable attention due to their ultraclean interface, controllable stacking order, good flexibility, and other excellent characteristics.
Daming Zhou, Wei Yang, Jiangchao Han, Haoran Pan, Yining Wang, Jiarong Liu, Zijie Lu, Xiaoyang Lin, Weisheng Zhao   +8 more
doaj   +1 more source

Influence of CoFeB layer thickness on elastic parameters in CoFeB/MgO heterostructures

Scientific Reports, 2023
The surface acoustic waves, i.e., surface phonons may have huge potential for future spintronic devices, if coupled to other waves (e.g., spin waves) or quasiparticles.
S. Shekhar, S. Mielcarek, Y. Otani, B. Rana, A. Trzaskowska   +4 more
doaj   +1 more source

Prospect for antiferromagnetic spintronics [PDF]

, 2015
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics.
Fina, I., Jungwirth, T., Martí, X.
core   +3 more sources

A novel computing-in-memory array based on STT-MRAM using high on–off ratio 2T-1M bit-cell [PDF]

AIP Advances
With the rapid advancement of artificial intelligence (AI) and the explosion of data, there is an increasingly urgent demand for computing-in-memory technology.
Peng Liu, Bo Liu, Yinuo Shi, Xiang Feng, Wenbiao Zhang   +4 more
doaj   +1 more source

Numerical renormalization group study of the Loschmidt echo in Kondo systems

Scientific Reports, 2022
We study the dynamical properties of the one-channel and two-channel spin-1/2 Kondo models after quenching in Hamiltonian variables. Eigen spectrum of the initial and final Hamiltonians is calculated by using the numerical renormalization group method ...
Tomasz Ślusarski, Kacper Wrześniewski, Ireneusz Weymann   +2 more
doaj   +1 more source