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Read Static Noise Margin Decrease of 65-Nm 6-T SRAM Cell Induced by Total Ionizing Dose
IEEE Transactions on Nuclear Science, 2018Jinghao Zhao, Xuefeng Yu, Qiwen Zheng
exaly
Analytical Model of Static Noise Margin in CMOS SRAM for Variation Consideration
IEICE Transactions on Electronics, 2008Hidetoshi Onodera +2 more
exaly
Statistical Simulation of Static Noise Margin Variability in Static Random Access Memory
IEEE Transactions on Semiconductor Manufacturing, 2010Yiming Li, Ming-Hung Han, Hui-Wen Cheng
exaly
Correlations Between Static Noise Margin and Single-Event-Upset Hardness for SRAM Cells
2020Zheng-Sheng Han, Xin-Yu Liu
exaly
Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells
IEEE Transactions on Nuclear ScienceYudong Li, Qiwen Zheng, Qi Guo
exaly
Impact of DIBL Variability on SRAM Static Noise Margin Analyzed by DMA SRAM TEG
2010Toshiro Hiramoto
exaly
A Power and Static Noise Margin Analysis of Different SRAM Cells at 180nm Technology
2019Vanita Agarwal
exaly

