Results 131 to 140 of about 295,937 (324)

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

Advanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won, Jeongwoo Lee, Hyunwook Kim, Joon Hak Oh   +3 more
wiley   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics

Communications Materials
ZrO2-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO2-based ferroelectrics, making them promise for nanoelectronics.
Haoji Qian, Rongzong Shen, Jiacheng Xu, Miaomiao Zhang, Minglei Ma, Yian Ding, Xiaoxi Li, Gaobo Lin, Jiani Gu, Ran Cheng, Yan Liu, Chengji Jin, Jiajia Chen, Yue Hao, Genquan Han   +14 more
doaj   +1 more source

A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

IEEE Journal of the Electron Devices Society
Using a 3-D monolithic stacking memory technology of crystalline oxide semiconductor (OS) transistors, we fabricated a test chip having AI accelerator (ACC) memory for weight data of a neural network (NN), backup memory of flip-flops (FF), and CPU memory
Kouhei Toyotaka, Yuto Yakubo, Kazuma Furutani, Haruki Katagiri, Masashi Fujita, Yoshinori Ando, Toru Nakura, Shunpei Yamazaki   +7 more
doaj   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration

Advanced Intelligent Systems
The growing computation complexity arising from recent advancements in data similarity‐based artificial intelligence and machine learning algorithms has amplified the demand for specialized hardware accelerators, such as ternary content‐addressable ...
Hyeong Jun Seo, Kanghyeon Byun, Minseung Kang, Youngchae Roh, Changhoon Joe, Sangbum Kim   +5 more
doaj   +1 more source

Active Supply Control in Static Random Access Memories (Actieve vermogencontrole in Static Random Access Memories)

, 2009
The evolution of the cell phone from a "simple" wireless phone to a port able multimedia station is a prime example of the paradigm shift in mode rn day electronics. Applications evolve towards more mobility and more multimedia. This requires an increase in power efficiency of the electronic systems as battery power is limited.
openaire   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors [PDF]

, 2007
Yiming Li, Chih‐Hong Hwang, Shao-Ming Yu   +2 more
openalex   +1 more source