Results 111 to 120 of about 30,204 (293)

Statis random access memory with symmetric leakage-compensated bit line

, 2004
An eight-cell for static random access memory, the memory cell comprising cross-coupled inverters to store the information bit, two access nMOSFETs connected to local bit lines to access the stored information bit, and two nMOSFETs each having a gate ...
Hsu, Steven K.,, Krishnamurthy, Ram K.,, De, Vivek K.,, Alvandpour, Atila,, Somasekhar, Dinesh,   +4 more
core  

Learning optimal erasure of a Static Random Access Memory

In this paper, we study the thermodynamic cost associated with erasing a static random access memory. By combining the stochastic thermodynamics framework of electronic circuits with machine learning-based optimization techniques, we show that it is possible to erase an electronic random access memory at arbitrarily fast speed and finite heat ...
Basile, Tomas, Proesmans, Karel
openaire   +2 more sources

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Stacking magnetic random access memory atop microprocessors: an architecture-level evaluation

, 2011
Magnetic random access memory (MRAM) has been considered as a promising memory technology because of its attractive properties such as non-volatility, fast access, zero standby leakage and high density.
Wu, X., X. Wu, Y. Chen, Chen, Y., Dong, X., X. Dong, Xie, Y., H. Li, Li, H., Y. Xie   +9 more
core   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

M3D-MDA: New scratchpad memory for enhancing GPU performance and energy efficiency

ETRI Journal
Applications in various fields, such as deep learning and scientific computing, naturally exhibit data access patterns along both the row and column dimensions of static random access memory (SRAM).
Cong Thuan Do
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

, 2010
A 0.5 V six-transistor static random access memory (6T-SRAM) with ferroelectric-gate field-effect-transistors (Fe-FETs) is proposed and experimentally demonstrated for the first time. During the read and the hold, the threshold voltage (V
Shuhei Tanakamaru, Teruyoshi Hatanaka, Mitsue Takahashi, Kousuke Miyaji, Shigeki Sakai, Ryoji Yajima, Ken Takeuchi   +6 more
core   +1 more source

AI–Guided 4D Printing of Carnivorous Plants–Inspired Microneedles for Accelerated Wound Healing

Advanced Materials, EarlyView.
This work presents an artificial intelligence (AI)‐guided 4D‐printed microneedle platform inspired by carnivorous plants for wound healing. A thermo‐responsive shape memory polymer enables body temperature–triggered self‐coiling for autonomous wound closure.
Hyun Lee, Moon‐Jo Kim, DongEung Kim, Chan Ho Moon, Seojoon Bang, Hyeong Seok Kang, Ju Yeong Gwon, Jong Hwa Seo, Junhyub Jeon, Junhyuk Son, Munwon Lim, Minho Kang, Dong Yun Lee, Donghyun Lim, Jung‐Hoon Park, Gi Doo Cha, Soo‐Hong Lee, Tae‐Sik Jang, Kisuk Yang, Yunho Jeong, Youngho Eom, Hyun‐Do Jung   +21 more
wiley   +1 more source

A review on monolithic 3D integration: From bulk semiconductors to low-dimensional materials

Nano Research
Monolithic three-dimensional (M3D) integration represents a transformative approach in semiconductor technology, enabling the vertical integration of diverse functionalities within a single chip. This review explores the evolution of M3D integration from
Ziying Hu, Hongtao Li, Mingdi Zhang, Zeming Jin, Jixiang Li, Wenku Fu, Yunyun Dai, Yuan Huang, Xia Liu, Yeliang Wang   +9 more
doaj   +1 more source