Results 111 to 120 of about 304,009 (317)

S²RAM: Optimization of SRAM With Memory Access Patterns

open access: yesIEEE Access
This paper presents a static sequential-random-access memory (S2RAM) designed to enable low-power and high-performance operations for workloads involving sequential memory accesses.
Woong Choi
doaj   +1 more source

CoNNeCT Baseband Processor Module [PDF]

open access: yes
A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs).
Goodpasture, Richard L.   +3 more
core   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Meniscus Pixel Printing for Contact‐Lens Vision Sensing and Robotic Control

open access: yesAdvanced Functional Materials, EarlyView.
A visual‐sensing contact lens is enabled by meniscus pixel printing (MPP), which rapidly patterns a 200 µm perovskite photodetector pixel in 1 s without masks, vacuum processing, or bulky equipment. A deep‐learning‐based super‐resolution reconstructs sparse on‐lens signals into 80 × 80 high‐resolution visual information, while AI‐driven eye‐tracking ...
Byung‐Hoon Gong   +7 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

Home - About - Disclaimer - Privacy