Results 101 to 110 of about 304,009 (317)

4H-SiC Radiation Hardened Static Random Access Memory

IEEE Electron Device Letters
Shin-Ichiro Kuroki, Toya Kai, Taisei Ozaki, Kazutoshi Kojima, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka   +6 more
openaire   +3 more sources

Cloud Data Auditing Using Proofs of Retrievability

, 2017
Cloud servers offer data outsourcing facility to their clients. A client outsources her data without having any copy at her end. Therefore, she needs a guarantee that her data are not modified by the server which may be malicious.
Ruj, Sushmita, Sengupta, Binanda
core   +1 more source

Predicting Atomic Charges in MOFs by Topological Charge Equilibration

Advanced Functional Materials, EarlyView.
An atomic charge prediction method is presented that is able to accurately reproduce ab‐initio‐derived reference charges for a large number of metal–organic frameworks. Based on a topological charge equilibration scheme, static charges that fulfill overall neutrality are quickly generated.
Babak Farhadi Jahromi, Sumukh Shankar Sharadaprasad, Rochus Schmid   +2 more
wiley   +1 more source

URcon: Unified and Reconfigurable Control and Verification Platform for Multi-Mode Customized eDRAM and SRAM Macros

IEEE Access
With the rapid development of various technologies, processing large amounts of data has become essential. To address this trend, various high-density and high-performance memories have emerged.
Ho-Sung Lee, Ik-Hyeon Jeon, Jiwon Lee, Hyeonjun Cheon, Joo-Hyung Chae   +4 more
doaj   +1 more source

Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions

Advanced Functional Materials, EarlyView.
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan, Joe Sunny, Tamer Karaman, Reshma Peremadathil‐Pradeep, Emily Darwin, Felix Büttner, Dieter Suess, Hans Josef Hug, Manfred Albrecht   +8 more
wiley   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

On dynamic breadth-first search in external-memory [PDF]

, 2010
We provide the first non-trivial result on dynamic breadth-first search (BFS) in external-memory: For general sparse undirected graphs of initially $n$ nodes and O(n) edges and monotone update sequences of either $\Theta(n)$ edge insertions or $\Theta(n)$
Meyer, Ulrich
core   +1 more source

Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope [PDF]

, 2013
Worasom Kundhikanjana, Yanhong Yang, Q Tanga, K. Zhang, Koon Chun Lai, Yue Ma, Michael A. Kelly, X X Li, Z-X. Shen   +8 more
openalex   +1 more source

Exploiting Application Behaviors for Resilient Static Random Access Memory Arrays in the Near-Threshold Computing Regime

, 2021
Dieudonne Manzi Mugisha
openalex   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source