Results 91 to 100 of about 30,204 (293)
Radiation tolerant capacitor-SRAM without area overhead
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo +4 more
doaj +1 more source
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc +1 more source
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Designs of Low-Power Static Random-Access Memory
With the fast development of big data, Internet of Things (IoT), and edge computing, the memory systems are required to the highest ever, in which the performance and energy efficiency have significant impacts on the overall system capability. Three things about SRAM make it ideal for on-chip storage and cache memories, It features high read and write ...
Yun Liu, Lin Zhao
openaire +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Si/SiGe tunnelling static random access memories
One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum
Paul, D., Ternent, G.
core
In this study, a ratioless full-complementary 12-transistor static random access memory (SRAM) was developed and measured to evaluate its operation under an ultra low supply voltage range.
55624478963 +16 more
core +2 more sources
S²RAM: Optimization of SRAM With Memory Access Patterns
This paper presents a static sequential-random-access memory (S2RAM) designed to enable low-power and high-performance operations for workloads involving sequential memory accesses.
Woong Choi
doaj +1 more source
Multidimensional Cellular Micro‐Compartments to Model Invasive Lobular Carcinoma Dormancy
Invasive lobular carcinoma (ILC) is an understudied subtype of breast cancer that is susceptible to late recurrences. In this study, micro‐compartmentalization techniques spanning multiple dimensions, including 2D, pseudo‐3D, and 3D, are integrated to uncover the mechanisms underlying ILC dormancy, revealing the central role of p27Kip1.
Xilal Y. Rima +15 more
wiley +1 more source
This review examines how cellular behavior is regulated by mechanical cues transmitted through soft biomaterials, from single‐cell mechanosensing to tissue‐level adaptation. It highlights why physiological relevance, rather than model complexity alone, is critical for translational mechanobiology and introduces a scoring framework linking material ...
Mathias Polz +9 more
wiley +1 more source

