Results 71 to 80 of about 30,204 (293)

Molecular Dynamics Studies of Shape Memory Polymers: From Bead–Spring Models to Atomistic Simulations

Advanced Engineering Materials, EarlyView.
Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley   +1 more source

Firmware Attestation in IoT Swarms Using Relational Graph Neural Networks and Static Random Access Memory

AI
The proliferation of Internet of Things (IoT) swarms—comprising billions of low-end interconnected embedded devices—has transformed industrial automation, smart homes, and agriculture.
Abdelkabir Rouagubi, Chaymae El Youssofi, Khalid Chougdali   +2 more
doaj   +1 more source

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Journal of Nanotechnology, 2020
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan   +3 more
doaj   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

Advanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge, P. Sanju S. Panawala, Joseph F. S. Fernando, Zhenhuan Chen, Chao Zhang, Dong‐Chen Qi, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +8 more
wiley   +1 more source

4H-SiC Radiation Hardened Static Random Access Memory

4H-SiC static random-access memory (SRAM) was suggested and demonstrated for extreme-environment applications. The 4H-SiC SRAMs show the proper memory states with high static noise margins (SNMs).
Toya Kai, Shin-Ichiro Kuroki, Takeyama Akinori, Yasunori Tanaka, Kazutoshi Kojima, Ohshima Takeshi, Taisei Ozaki   +6 more
core   +1 more source

Energy-Efficient Architecture for Wireless Sensor Networks in Healthcare Applications

IEEE Access, 2018
The need to deploy wireless sensor networks (WSNs) for real-world applications, such as mobile multimedia for healthcare organizations, is increasing spectacularly.
Nayif Saleh, Abdallah Kassem, Ali M. Haidar   +2 more
doaj   +1 more source

Designing Polymer Nanocomposites for X‐Ray Shielding: Mechanisms, Architectures, and Scalable Processing

Advanced Engineering Materials, EarlyView.
This review highlights advances in lightweight, lead‐free polymer nanocomposites for diagnostic X‐ray shielding. By linking filler chemistry, dispersion, architecture, and photon interaction mechanisms, it establishes structure–performance relationships guiding material design.
Aklilu G. Messele, Hossein Ipakchi, Tizazu H. Mekonnen   +2 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A FerroFET-Based In-Memory Processor for Solving Distributed and Iterative Optimizations via Least-Squares Method

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
In recent years, several designs that use in-memory processing to accelerate machine-learning inference problems have been proposed. Such designs are also a perfect fit for discrete, dynamic, and distributed systems that can solve large-dimensional ...
Insik Yoon, Muya Chang, Kai Ni, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Justin Romberg, Vijaykrishnan Narayanan, Asif Khan, Suman Datta, Arijit Raychowdhury   +11 more
doaj   +1 more source