Results 61 to 70 of about 31,922 (257)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source

Combined physical unclonable function circuit implementation for generation true random number sequences

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The possibility of using two physical unclonable functions (based on static random access memory and on the ring oscillators) to produce true random number sequences was investigated.
S. S. Zalivako, A. A. Ivaniuk
doaj  

DESIGN AND ANALYSIS OF STATIC RANDOM ACCESS MEMORY BY SCHMITT TRIGGER TOPOLOGY FOR LOW VOLTAGE APPLICATIONS [PDF]

Journal of Engineering Science and Technology, 2016
Aggressive scaling of transistor dimensions with each technology generation has resulted an increased integration density and improved device performance at the expense of increased leakage current.
RUKKUMANI V., DEVARAJAN N.
doaj  

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

URcon: Unified and Reconfigurable Control and Verification Platform for Multi-Mode Customized eDRAM and SRAM Macros

IEEE Access
With the rapid development of various technologies, processing large amounts of data has become essential. To address this trend, various high-density and high-performance memories have emerged.
Ho-Sung Lee, Ik-Hyeon Jeon, Jiwon Lee, Hyeonjun Cheon, Joo-Hyung Chae   +4 more
doaj   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

From Geometry to Function: Programmable Mechanical Response in 3D‐Printed Adipose‐Inspired Soft Metamaterials

Advanced Functional Materials, EarlyView.
Geometry‐driven design of soft cellular metamaterials is systematically investigated by combining experiments, finite element modeling, and statistical prediction. The study quantifies how unit cell geometry and material properties govern stiffness, instability, densification, and energy absorption.
Alice Berardo, Gianmarco Dolino, Damiano Coato, Paolo Gargiulo, Emanuele Luigi Carniel   +4 more
wiley   +1 more source

Radiation tolerant capacitor-SRAM without area overhead

Nuclear Engineering and Technology
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon   +4 more
doaj   +1 more source