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Design of static random access memory using QCA technology
2016 3rd International Conference on Devices, Circuits and Systems (ICDCS), 2016Quantum dot Cellular Automata(QCA) is one of the emerging trends in the field of nanotechnology which helps to overcome the limitations of CMOS technology. QCA can be used to design memory circuits. Static Random Access Memory (SRAM) is one of the attractive application of QCA technology.
D. Gracia Nirmala Rani +5 more
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Static Random Access Memory Technologies
2009This chapter contains sections titled: Basic SRAM Architecture and Cell Structures SRAM Selection Considerations High Performance SRAMs Advanced SRAM Architectures Low-Voltage SRAMs BiCMOS Technology SRAMs SOI SRAMs Specialty SRAMs This chapter contains sections titled ...
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Parallel testing of multi-port static random access memories
Microelectronics Journal, 2003Abstract This paper presents a novel approach for testing multi-port memories. This approach is based on the parallel execution of the testing process so that inter-port faults (shorts and coupling faults) can be detected at no loss of coverage and with no increase in the number of tests compared with a single-port memory.
F. Karimi +4 more
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Design of ternary clocked adiabatic static random access memory
Journal of Semiconductors, 2011Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the ...
Pengjun Wang, Fengna Mei
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On design of multiple-valued static random-access-memory
Proceedings of the Twentieth International Symposium on Multiple-Valued Logic, 2002General theories on multiple-valued static random-access memory (RAM) are investigated. The criteria for a stable and an unstable mode are proved with strict mathematical methods and expressed with diagrammatic representation. A circuit design and realization for NMOS six-transistor ternary and quaternary static RAM cells based on the theories are ...
O. Ishizuka, Z. Tang, H. Matsumoto
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Review of Sense Amplifiers for Static Random Access Memory
IETE Technical Review, 2013Sense amplifier (SA) is being viewed as one of the most critical circuits in the periphery of high-speed, low-power-embedded static random access memory (SRAMs).
Jiafeng Zhu, Na Bai, Jianhui Wu
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Multivalued static random access memory using multivalued FET
International Journal of Electronics Letters, 2018Quaternary logic is very promising logic for multivalued logic implementation. Four state or quaternary static random access memory (SRAM) can be designed using quantum dot gate-quantum dot channel...
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Testing static and dynamic faults in random access memories
Proceedings 20th IEEE VLSI Test Symposium (VTS 2002), 2003The ever increasing trend to reduce DPM levels of memories requires tests with very high fault coverage. The important class of dynamic faults, therefore, cannot be ignored any more. It is shown that conventional memory tests constructed to detect static faulty behavior of a specific defect do not necessarily detect the dynamic faulty behavior. Indeed,
S. Hamdioui +2 more
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Reliability Improvement of Static Random Access Memory Bit-Cells
2019 International Conference on Smart Systems and Inventive Technology (ICSSIT), 2019The rapid growth in the semiconductor industry has paved the pathway for tremendous advancement in semiconductor memory technology. Internet of Things (IoT), wireless body sensor nodes and other high-end applications need power-efficient and reliable memories.
E.Jebamalar Leavline, A. Sugantha
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Applications in Static Random Access Memory (SRAM)
2016Continuous efforts to shrink the physical size of transistors enable the integration of a larger number of transistors on a single chip.
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