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A dynamic reconfiguration scheme for mega bit Static Random Access Memories

Microelectronics Reliability, 1994
Abstract The objective of this paper is to present a novel dynamic reconfiguration scheme for mega bit Static Random Access Memories (SRAMs). Most of the conventional reconfiguration methods are implemented using two-way switching elements. The proposed scheme is based on on-chip word failure detection and reconfiguration to spare word cell using ...
Venkatapathi N. Rayapati   +1 more
openaire   +2 more sources

Statistical Simulation of Static Noise Margin Variability in Static Random Access Memory

IEEE Transactions on Semiconductor Manufacturing, 2010
In this paper, we examine the impact of random-dopant-fluctuation (RDF), process-variation-effect (PVE), and workfunction-fluctuation (WKF), on 16-nm-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) cells.
Yiming Li, Hui-Wen Cheng, Ming-Hung Han
openaire   +1 more source

Solution-processed carbon nanotube thin-film complementary static random access memory

Nature Nanotechnology, 2015
Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits.
Michael L, Geier   +6 more
openaire   +2 more sources

Random testing of multi-port static random access memories

Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002), 2003
This paper presents the analysis and modeling of random testing for its application to multi-port memories. Ports operate to simultaneously test the memory and detecting multi-port related faults. The state of the memory under test in the presence of inter-port faults has been modeled using Markov state diagrams.
F. Karimi, F.J. Meyer, F. Lombardi
openaire   +1 more source

Trends in bipolar static random access memory (SRAM) design

Proceedings of the Bipolar Circuits and Technology Meeting, 2003
A comparison of the high-performance static random access memories (SRAMs) of today to those of 20 years ago (1969) shows that the performance has been increased by a factor of 10 while costs have been improved by a factor of 100. An overview of SRAM circuits is provided, covering early configurations; ECL memory cells; alpha-particle soft errors ...
openaire   +1 more source

Power Aware 10T Static Random-Access Memory Design

2023 2nd International Conference on Vision Towards Emerging Trends in Communication and Networking Technologies (ViTECoN), 2023
Mooni Rahul   +3 more
openaire   +1 more source

Radiation Tolerant by Design 12-transistor Static Random Access Memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022
Monalisa Pandey, Aminul Islam
openaire   +1 more source

Static quenching upon adduct formation: a treatment without shortcuts and approximations

Chemical Society Reviews, 2021
Damiano Genovese   +2 more
exaly  

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