One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors [PDF]
Scientific Reports, 2021 In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi +3 more
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Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions [PDF]
Sensors, 2018 Static Random Access Memory (SRAM) Physical Unclonable Functions (PUFs) are some of the most popular PUFs that provide a highly-secured solution for secret key storage.
Mingyang Gong +3 more
doaj +3 more sources
Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [PDF]
Nature CommunicationsStatic Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption.
Muhtasim Ul Karim Sadaf +8 more
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A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor [PDF]
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj +2 more sources
Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects [PDF]
Micromachines, 2023 We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided ...
Minji Bang +4 more
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Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments [PDF]
MicromachinesAs semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
doaj +2 more sources
Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory [PDF]
Micromachines, 2019 In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the previous research, it is investigated whether additional electrical coupling other than ...
Tae Jun Ahn +3 more
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Low-power adiabatic 9T static random access memory
The Journal of Engineering, 2014 In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi +3 more
doaj +2 more sources
All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory [PDF]
IEEE Electron Device Letters, 2018 Static random access memory (SRAM) is essential for cache memory. Although oxide semiconductors are ideal candidate materials for next-generation flexible electronics, complementary SRAM based on oxide semiconductors has not yet been demonstrated. Here, we reported an SRAM with a traditional six-transistor structure based on n-type indium gallium zinc ...
Jin Yang +9 more
openaire +4 more sources