Results 101 to 110 of about 52,126 (300)

Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics

Communications Materials
ZrO2-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO2-based ferroelectrics, making them promise for nanoelectronics.
Haoji Qian, Rongzong Shen, Jiacheng Xu, Miaomiao Zhang, Minglei Ma, Yian Ding, Xiaoxi Li, Gaobo Lin, Jiani Gu, Ran Cheng, Yan Liu, Chengji Jin, Jiajia Chen, Yue Hao, Genquan Han   +14 more
doaj   +1 more source

A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

IEEE Journal of the Electron Devices Society
Using a 3-D monolithic stacking memory technology of crystalline oxide semiconductor (OS) transistors, we fabricated a test chip having AI accelerator (ACC) memory for weight data of a neural network (NN), backup memory of flip-flops (FF), and CPU memory
Kouhei Toyotaka, Yuto Yakubo, Kazuma Furutani, Haruki Katagiri, Masashi Fujita, Yoshinori Ando, Toru Nakura, Shunpei Yamazaki   +7 more
doaj   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration

Advanced Intelligent Systems
The growing computation complexity arising from recent advancements in data similarity‐based artificial intelligence and machine learning algorithms has amplified the demand for specialized hardware accelerators, such as ternary content‐addressable ...
Hyeong Jun Seo, Kanghyeon Byun, Minseung Kang, Youngchae Roh, Changhoon Joe, Sangbum Kim   +5 more
doaj   +1 more source

Active Supply Control in Static Random Access Memories (Actieve vermogencontrole in Static Random Access Memories)

, 2009
The evolution of the cell phone from a "simple" wireless phone to a port able multimedia station is a prime example of the paradigm shift in mode rn day electronics. Applications evolve towards more mobility and more multimedia. This requires an increase in power efficiency of the electronic systems as battery power is limited.
openaire   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

Advanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov, Patrick Fesser, Boris A. Bulgakov, Ulrich S. Schubert   +3 more
wiley   +1 more source

s‐Orbital Mediated Metavalent Bonding Enables State‐Of‐The‐Art n‐Type AgBiSe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
Metavalent bonding (MVB) underpins the exceptional property portfolio of chalcogenides. Typical MVB solids are mainly found in p‐bonded systems. This work reveals that MVB can also be formed with s‐p orbital interactions upon forming a single‐electron σ‐bond, as exemplified in AgBiSe2.
Binrong Huang, Dasol Kim, Yuan Yu, Jinxuan Zhong, Jianbo Zhu, Yaoling Shen, Yu Guo, Moran Wang, Jiawei Huang, Tu Lyu, Nan Lin, Yongsheng Zhang, Matthias Wuttig, Lipeng Hu   +13 more
wiley   +1 more source

Optimal control of static RAM erasure: arbitrarily fast operation with finite dissipation

New Journal of Physics
In this paper, we study the thermodynamic cost associated with erasing a static random access memory. Using the framework of stochastic thermodynamics applied to electronic circuits, combined with optimization techniques based on machine learning, we ...
Tomás Basile, Karel Proesmans
doaj   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source