Results 111 to 120 of about 300,093 (324)

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

CoNNeCT Baseband Processor Module [PDF]

open access: yes
A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs).
Goodpasture, Richard L.   +3 more
core   +1 more source

Block Copolymers: Emerging Building Blocks for Additive Manufacturing

open access: yesAdvanced Functional Materials, EarlyView.
This review addresses how block copolymer (BCP) physics and rheology have led to the widespread use of BCPs in advanced additive manufacturing techniques, with particular emphasis on the untapped potential of these nanostructured materials toward achieving multi‐scale architected materials with unique, programmable material properties.
Alice S. Fergerson   +3 more
wiley   +1 more source

Predicting Atomic Charges in MOFs by Topological Charge Equilibration

open access: yesAdvanced Functional Materials, EarlyView.
An atomic charge prediction method is presented that is able to accurately reproduce ab‐initio‐derived reference charges for a large number of metal–organic frameworks. Based on a topological charge equilibration scheme, static charges that fulfill overall neutrality are quickly generated.
Babak Farhadi Jahromi   +2 more
wiley   +1 more source

VARIABILITY ANALYSIS OF 6T AND 7T SRAM CELL IN SUB-45NM TECHNOLOGY

open access: yesInternational Islamic University Malaysia Engineering Journal, 2011
This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness.
Aminul Islam, Mohd. Hasan
doaj   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

open access: yesAdvanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won   +3 more
wiley   +1 more source

Engineering DFS-Based Graph Algorithms

open access: yes, 2017
Depth-first search (DFS) is the basis for many efficient graph algorithms. We introduce general techniques for the efficient implementation of DFS-based graph algorithms and exemplify them on three algorithms for computing strongly connected components ...
Mehlhorn, Kurt   +2 more
core  

Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan   +8 more
wiley   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

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