Results 191 to 200 of about 17,368,081 (283)

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Interpretable Machine Learning Framework for Nb─Si Based Alloy Design with Enhanced Fracture Toughness

Advanced Science, EarlyView.
An interpretable machine learning framework integrating SHAP and PDP analysis identifies critical design descriptors from 139 physicochemical features for Nb─Si alloys. The framework achieves <7% prediction error and guides the discovery of Nb38.5Ti38.5Si3Zr18V2 alloy with 22.791 MPa·m1/2 fracture toughness, breaking the 20 MPa·m1/2 barrier.
Dezhi Chen, Chao Xu, Jingyue Yu, Qi Wang, Hongze Fang, Shuo Yin, Turab Lookman, Ruirun Chen   +7 more
wiley   +1 more source

2D Materials‐Based Static Random‐Access Memory

Advanced Materials, 2022
Abstract2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)‐based field‐effect transistor (FET) and static random‐access memory (SRAM) cells analyzing the impact of layer thickness reveals that the ...
Chang‐Ju Liu, Yi Wan, Lain‐Jong Li, Chih‐Pin Lin, Tuo‐Hung Hou, Zi‐Yuan Huang, Vita Pi‐Ho Hu   +6 more
exaly   +6 more sources

Static Response of Three-Dimensional and Printed Complementary Organic TFTs-Based Static Random-Access Memory

IEEE Electron Device Letters, 2022
A three-dimensional (3-D) and printed static random-access memory (SRAM) based on complementary organic thin-film transistors is demonstrated. The SRAM exhibited the smallest area of 2.1 mm2, the highest normalized static noise margin of 62%, and the ...
Sungjune Jung, Woojo Kim
exaly   +3 more sources

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Design of a Stable Low Power 11-T Static Random Access Memory Cell

Journal of Circuits, Systems and Computers, 2020
In this paper, a 11-T static random-access memory (SRAM) cell has been examined that shows a fair reduction in read power dissipation while upholding the stability and moderate performance.
Vinay Tomar, Ashish Sachdeva
exaly   +2 more sources

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

ACS Nano
Flexible static random access memory (SRAM) plays an important role in flexible electronics and systems. However, achieving SRAM with a small footprint, high flexibility, and high thermal stability has always been a big challenge.
Kuan-Chang Chang, Hong Meng, Xinwei Wang
exaly   +2 more sources

Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors

IEEE Transactions on Electron Devices, 2019
In this paper, we propose a novel static random access memory (SRAM) unit cell design and its array structure consisting of single-gated feedback field-effect transistors (FBFETs). To verify the SRAM characteristics, the basic memory operations and write
Sola Woo, Jinsun Cho, Sangsig Kim
exaly   +2 more sources

A Review of Low-Power Static Random Access Memory (SRAM) Designs

2023 IEEE Devices for Integrated Circuit (DevIC), 2023
The growing demand for low-power static random access memory (SRAM) cells in Internet of Things (IoT) devices has led to the development of various SRAM cell topologies that minimize power consumption while maintaining performance and stability.
Neetu Rathi, Anil Kumar, N. Gupta, S. Singh   +3 more
semanticscholar   +1 more source

Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory

IEEE Transactions on Nuclear Science, 2023
Power-up states of static random-access memory (SRAM) memories are often used for generating physical unclonable functions (PUFs) in a variety of integrated circuits.
U. Surendranathan, Horace Wilson, M. Wasiolek, K. Hattar, A. Milenković, Biswajit Ray   +5 more
semanticscholar   +1 more source