Results 41 to 50 of about 52,126 (300)

Low-Power Radiation-Hardened Static Random Access Memory with Enhanced Read Stability for Space Applications

open access: yesApplied Sciences
In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
doaj   +1 more source

Shared Genetic Effects and Antagonistic Pleiotropy Between Multiple Sclerosis and Common Cancers

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Epidemiologic studies have reported inconsistent altered cancer risk in individuals with multiple sclerosis (MS). Factors such as immune dysregulation, comorbidities, and disease‐modifying therapies may contribute to this variability.
Asli Buyukkurt   +5 more
wiley   +1 more source

The methodology for active testing of electronic devices under the radiations [PDF]

open access: yesNuclear Technology and Radiation Protection, 2018
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized.
Parlato Aldo   +3 more
doaj   +1 more source

Applying an Ethical Lens to the Treatment of People With Multiple Sclerosis

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT The practice of neurology requires an understanding of clinical ethics for decision‐making. In multiple sclerosis (MS) care, there are a wide range of ethical considerations that may arise. These involve shared decision‐making around selection of a disease‐modifying therapy (DMT), risks and benefits of well‐studied medications in comparison to
Methma Udawatta, Farrah J. Mateen
wiley   +1 more source

Impact of body biasing on the retention time of gain-cell memories

open access: yesThe Journal of Engineering, 2013
Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM).
Pascal Meinerzhagen   +3 more
doaj   +1 more source

Unraveling the Molecular Mechanisms of Glioma Recurrence: A Study Integrating Single‐Cell and Spatial Transcriptomics

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Glioma recurrence severely impacts patient prognosis, with current treatments showing limited efficacy. Traditional methods struggle to analyze recurrence mechanisms due to challenges in assessing tumor heterogeneity, spatial dynamics, and gene networks.
Lei Qiu   +10 more
wiley   +1 more source

Overview of Phase-Change Materials Based Photonic Devices

open access: yesIEEE Access, 2020
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj   +1 more source

Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory

open access: yesIEEE Access, 2023
In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD ...
Jonghyeon Ha   +5 more
doaj   +1 more source

Clustering Algorithm Reveals Dopamine‐Motor Mismatch in Cognitively Preserved Parkinson's Disease

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective To explore the relationship between dopaminergic denervation and motor impairment in two de novo Parkinson's disease (PD) cohorts. Methods n = 249 PD patients from Parkinson's Progression Markers Initiative (PPMI) and n = 84 from an external clinical cohort.
Rachele Malito   +14 more
wiley   +1 more source

An Ultra-low-power Static Random-Access Memory Cell Using Tunneling Field Effect Transistor

open access: yes, 2020
In this research article, an Ultra-low-power 1-bit SRAM cell is introduced using Tunneling Field Effect Transistor (TFET). This paper investigates feasible 6T SRAM configurations on improved N-type and P-type TFETs integrated on both InAs (Homojunction ...
N. Arunkumar   +4 more
semanticscholar   +1 more source

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