Results 101 to 110 of about 657,839 (241)

Covariant Path Integrals for Quantum Fields Backreacting on Classical Space-Time

Physical Review X
We introduce configuration space path integrals for quantum fields interacting with classical fields. We show that this can be done consistently by proving that the dynamics are completely positive directly, without resorting to master equation methods ...
Jonathan Oppenheim, Zachary Weller-Davies   +1 more
doaj   +1 more source

Fractional Inclusion Analysis of Superquadratic Stochastic Processes via Center-Radius Total Order Relation with Applications in Information Theory

Fractal and Fractional
This study presents, for the first time, a new class of interval-valued superquadratic stochastic processes and examines their core properties through the lens of the center-radius total order relation on intervals.
Mohsen Ayyash, Dawood Khan, Saad Ihsan Butt, Youngsoo Seol   +3 more
doaj   +1 more source

How to Solve Dynamic Stochastic Models Computing Expectations Just Once [PDF]

We introduce a technique called "precomputation of integrals" that makes it possible to compute conditional expectations in dynamic stochastic models in the initial stage of the solution procedure.
Lilia Maliar, Kenneth L. Judd, Serguei Maliar   +2 more
core  

Rotary 3D Printing With Integrated Electroplating

Advanced Engineering Materials, EarlyView.
A rotary material extrusion platform integrates localized copper electroplating with printing and encapsulation to fabricate cylindrical polymer–metal structures containing fully embedded, low‐resistance conductive pathways that enable internal Joule heating and thermally activated shape‐memory responses.
Antonio Zagaria, Nicola Larovere, Moslem Mohammadi, Gianluca Percoco, Ali Zolfagharian, Gianni Stano   +5 more
wiley   +1 more source

Level 2 and level 2.5 large deviation functionals for systems with and without detailed balance

New Journal of Physics, 2016
Large deviation functions are an essential tool in the statistics of rare events. Often they can be obtained by contraction from a so-called level 2 or level 2.5 large deviation functional characterizing the empirical density and current of the ...
J Hoppenau, D Nickelsen, A Engel
doaj   +1 more source

A Multi‐Scale Machine Learning Framework for the Inverse Design of High Entropy Alloys

Advanced Engineering Materials, EarlyView.
High‐entropy alloys offer vast potential for various applications, including electrocatalysis; however, their compositional complexity challenges conventional screening. We introduce an inverse‐design framework combining two neural networks to determine optimal compositions and reconstruct nanoparticle geometry from targeted properties and conventional
Mikael Takoutsin, Marta Campolucci, Nicolas de Andrade Ishiki, Nathan Mirgot, Nadir Zhamantay, Frédéric Kanoufi, Jennifer Peron, Jean Charlety, Emiliano Fonda, Valérie Briois, Marco Faustini, Maria‐Letizia De Marco, Christine Goyhenex, Ovidiu Ersen, Hervé Bulou   +14 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Stochastic integrals

, 2005
This little book is a brilliant introduction to an important boundary field between the theory of probability and differential equations. -E. B. Dynkin, Mathematical Reviews This well-written book has been used for many years to learn about stochastic ...
McKean, Henry P
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source