Results 101 to 110 of about 5,790,115 (297)

Discrete wave-analysis of continuous stochastic processes

open access: yes, 1973
he behaviour of a continuous-time stochastic process in the neighbourhood of zero-crossings and local maxima is compared with the behaviour of a discrete sampled version of the same process.For regular processes, with finite crossing-rate or finite rate ...
Lindgren, Georg,, Lund University.
core  

Simulation‐Based Analysis of Insert Pull‐Out in Nickel‐Polyurethane Hybrid Foams Using CT‐Derived Geometries

open access: yesAdvanced Engineering Materials, EarlyView.
CT‐based finite element simulations combined with in situ X‐ray computed tomography are used to analyze insert pull‐out in nickel‐coated polymer foams. Despite variations in material parameters, deformation consistently concentrates within a narrow annular region around the insert.
Yannik Bautz   +4 more
wiley   +1 more source

Exact Scenario Simulation for Selected Multi-dimensional Stochastic Processes [PDF]

open access: yes
Accurate scenario simulation methods for solutions of multi-dimensional stochastic differential equations find application in stochastic analysis, the statistics of stochastic processes and many other areas, for instance, in finance.
Eckhard Platen, Renata Rendek
core  

On the supremum of certain families of stochastic processes [PDF]

open access: yes, 2009
We consider a family of stochastic processes {X-t(epsilon), t is an element of T} on a metric space T, with a parameter epsilon down arrow 0. We study the conditions under which lim(epsilon -> 0)(P)(sup(r is an element of T)vertical bar X-t(epsilon ...
Pillai, Natesh S.   +2 more
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Non mean reverting affne processes for stochastic mortality [PDF]

open access: yes
In this paper we use doubly stochastic processes (or Cox processes) in order to model the random evolution of mortality of an individual. These processes have been widely used in the credit risk literature in modelling default arrival, and in this ...
Elisa Luciano, Elena Vigna
core  

Stochastic Processes Applied to Line Shapes

open access: yesOpen Astronomy, 2011
We present approaches using stochastic processes for the calculation of line broadening in plasmas. The derivation of model microfield methods (MMM) based on analytic formulations is recalled, as well as an approach using a simulation of the stochastic ...
Stamm R.   +10 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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