Results 101 to 110 of about 5,790,115 (297)
Discrete wave-analysis of continuous stochastic processes
he behaviour of a continuous-time stochastic process in the neighbourhood of zero-crossings and local maxima is compared with the behaviour of a discrete sampled version of the same process.For regular processes, with finite crossing-rate or finite rate ...
Lindgren, Georg,, Lund University.
core
CT‐based finite element simulations combined with in situ X‐ray computed tomography are used to analyze insert pull‐out in nickel‐coated polymer foams. Despite variations in material parameters, deformation consistently concentrates within a narrow annular region around the insert.
Yannik Bautz +4 more
wiley +1 more source
Exact Scenario Simulation for Selected Multi-dimensional Stochastic Processes [PDF]
Accurate scenario simulation methods for solutions of multi-dimensional stochastic differential equations find application in stochastic analysis, the statistics of stochastic processes and many other areas, for instance, in finance.
Eckhard Platen, Renata Rendek
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On the supremum of certain families of stochastic processes [PDF]
We consider a family of stochastic processes {X-t(epsilon), t is an element of T} on a metric space T, with a parameter epsilon down arrow 0. We study the conditions under which lim(epsilon -> 0)(P)(sup(r is an element of T)vertical bar X-t(epsilon ...
Pillai, Natesh S. +2 more
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An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Non mean reverting affne processes for stochastic mortality [PDF]
In this paper we use doubly stochastic processes (or Cox processes) in order to model the random evolution of mortality of an individual. These processes have been widely used in the credit risk literature in modelling default arrival, and in this ...
Elisa Luciano, Elena Vigna
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Stochastic Processes Applied to Line Shapes
We present approaches using stochastic processes for the calculation of line broadening in plasmas. The derivation of model microfield methods (MMM) based on analytic formulations is recalled, as well as an approach using a simulation of the stochastic ...
Stamm R. +10 more
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source

