Results 101 to 110 of about 453,439 (329)

Metal‐Mediated Nitrogen Doping of Carbon Supports Boosts Hydrogen Production from Ammonia

Angewandte Chemie, EarlyView.
A virtuous catalytic cycle is established as the carbon support simultaneously tunes electron density and stores atomic nitrogen formed via Ru–N species during ammonia decomposition, resulting in self‐enhancing catalysis. Abstract Ammonia is an attractive hydrogen carrier, yet its practical use is limited by the need for efficient catalytic ...
Thomas J. Liddy, Benjamin J. Young, Emerson C. Kohlrausch, Andreas Weilhard, Gazi N. Aliev, Yifan Chen, Manfred E. Schuster, Mohsen Danaie, Luke L. Keenan, Donato Decarolis, Diego Gianolio, Siqi Wang, Mingming Zhu, Graham J. Hutchings, David M. Grant, Wolfgang Theis, Tien‐Lin Lee, David A. Duncan, Alberto Roldan, Andrei N. Khlobystov, Jesum Alves Fernandes   +20 more
wiley   +2 more sources

Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization

Advanced Science, EarlyView.
A thermally robust (≈400 °C), critically small‐size‐simple ligand structure ruthenium (Ru) precursor enables exceptional growth per cycle (≈1.28 Å cycle−1), short incubation (≈8 cycles), ultralow resistivity (8.65 µΩ cm) and outstanding substrate selectivity via atomic layer deposition (ALD) process at high temperatures, overcoming prior Ru‐ALD ...
Hideaki Nakatsubo, Debananda Mohapatra, Eun‐Soo Lee, Jeongha Kim, Iaan Cho, Masato Iseki, Toshiyuki Shigetomi, Ryosuke Harada, Sang‐Woong Na, Taehoon Cheon, Bonggeun Shong, Soo‐Hyun Kim   +11 more
wiley   +1 more source

The signature of subsurface Kondo impurities in the local tunnel current [PDF]

, 2008
Ye S Avotina, Yu A Kolesnichenko, J M van Ruitenbeek   +2 more
openalex   +1 more source

Accelerated Discovery of Topological Conductors for Nanoscale Interconnects

Advanced Science, EarlyView.
Copper interconnects exhibit a sharp increase in resistivity at ultra‐scaled dimensions, threatening continued miniaturization of integrated circuits. The gapless surface states of topological semimetals provide conduction channels resistant to localization.
Alexander C. Tyner, William Rogers, Po‐Hsin Shih, Yi‐Hsin Tu, Gengchiau Liang, Hsin Lin, Ching‐Tzu Chen, James M. Rondinelli   +7 more
wiley   +1 more source

Citrus Yield and Quality as Affected by Subsurface Irrigation1 [PDF]

, 1975
R. J. Constantin, Ralph T. Brown, H. J. Braud   +2 more
openalex   +1 more source

Editor’s Choice: Advances in Carbon Capture Subsurface Storage and Utilization [PDF]

, 2023
Pål Østebø Andersen
openalex   +1 more source

Atomic Defects in Layered Transition Metal Dichalcogenides for Sustainable Energy Storage and the Intelligent Trends in Data Analytics

Advanced Science, EarlyView.
This review comprehensively summarizes the atomic defects in TMDs for their applications in sustainable energy storage devices, along with the latest progress in ML methodologies for high‐throughput TEM data analysis, offering insights on how ML‐empowered microscopy facilitates bridging structure–property correlation and inspires knowledge for precise ...
Zheng Luo, Ying Yang, Zizhen Fu, Fengqi Liu, Susu Fang, Kele Xu, Shanshan Wang   +6 more
wiley   +1 more source

Datasets for "Search for shallow subsurface structures in Chryse and Acidalia Planitiae on Mars"

, 2022
Aina Oura, Yasumasa Kasaba, Rina Noguchi, Atsushi Kumamoto, Ken Ishiyama, Tomohiro Usui, Fumonori Tsuchiya, Chihiro Uemura, Tomoki Kimura   +8 more
openalex   +1 more source

Chemical ordering and composition fluctuations at the (001) surface of the Fe-Ni Invar alloy

, 2006
We report on a study of (001) oriented fcc Fe-Ni alloy surfaces which combines first-principles calculations and low-temperature STM experiments. Density functional theory calculations show that Fe-Ni alloy surfaces are buckled with the Fe atoms slightly
A. Biedermann, C. Fritscher, F. Máca, I. Turek, J. Kudrnovský, J. Redinger, M. Ondráček, M. Schmid, M. Schmid, P. Varga, S. H. Vosko, W. A. Hofer   +11 more
core   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source