Results 131 to 140 of about 141,240 (252)

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, EarlyView.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Revised theoretical limit of subthreshold swing in field-effect transistors

, 2018
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the extent of a band tail. Since the saturation is universally observed
Beckers, Arnout, Jazaeri, Farzan, Enz, Christian   +2 more
openaire   +2 more sources

Changes in corticospinal excitability in response to mediolateral gait instability

Experimental Physiology, EarlyView.
Abstract Unpredictable gait disturbances, particularly in the mediolateral direction, pose a significant challenge to stability and are a common contributor to falls. Although the corticospinal tract is critical for gait and postural control, its response to such instabilities remains unclear.
Raven O. Huiberts, Sjoerd M. Bruijn, Jennifer L. Davies   +2 more
wiley   +1 more source

Postural control in humans: a study using transcutaneous spinal cord stimulation

Experimental Physiology, EarlyView.
Abstract The aim of the study was to investigate the spinal mechanisms involved in regulating postural balance in humans. Participants stood in a normal stance, with their spinal postural networks either non‐invasively activated or not stimulated by electrical stimulation.
Natalia Shamantseva, Ivan Sakun, Tatiana Klishkovskaia, Andrey Aksenov, Vsevolod Lyakhovetskii, Tatiana Moshonkina   +5 more
wiley   +1 more source

Energetic microdomains and the vascular control of neuronal and muscle excitability: Toward a unified model

The Journal of Physiology, EarlyView.
Abstract figure legend The capillary–mitochondria–ion channel (CMIC) axis scales structural resources to match functional workload. (Left) In settings of restricted energetic capacity (e.g. cortical neurons), sparse capillary networks and modest mitochondrial pools set a lower energetic ceiling, sufficient to support phasic, low‐workload excitability. (
L. Fernando Santana, Scott Earley
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors

Advanced Functional Materials, Volume 36, Issue 11, 5 February 2026.
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee, Okin Song, Ji Yun Park, Yonghyun Albert Kwon, Jae Hyung Kim, In Soo Kim, Zdeněk Sofer, Jeong Ho Cho, Deep Jariwala, Hyesung Park, Joohoon Kang   +10 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source